isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N-Channel Power Trench짰 MOSFET 40V, 110A, 1.8m廓

Features ■ Typ rDS(on) = 1.31mΩ at VGS = 10V, ID = 80A ■ Typ Qg(tot) = 107nC at VGS = 10V, ID = 80A ■ UIS Capability ■ RoHS Compliant ■ Qualified to AEC Q101 Applications ■ Automotive Engine Control ■ Powertrain Management ■ Solenoid and Motor Drivers ■ Electronic Steering ■ Integrated

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N 沟道，PowerTrench® MOSFET，40 V，110 A，1.8 mΩ

N 沟道，逻辑电平，PowerTrench® MOSFET，40 V，110 A，1.5 mΩ

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Product Description Audio, Control & Instrument Cable, 22 AWG stranded (7x30) tinned copper conductors, semi-rigid PVC insulation, twisted pairs, individually shielded with Beldfoil® (100 coverage), 22 AWG stranded tinned copper drain wire, PVC jacket.

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