isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=93A@ TC=25℃ ·Drain Source Voltage : VDSS=30V(Min) ·Static Drain-Source On-Resistance : RDS(on) =5.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

N-Channel Power Trench짰 MOSFET 40V, 110A, 1.2m廓

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=110A@ TC=25℃ ·Drain Source Voltage : VDSS=40V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.2mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N 沟道，Power Trench® MOSFET，40V，110A，1.2mΩ

MOSFET N-CH 40V 110A TO263AB

N-Channel Power Trench짰 MOSFET 40V, 110A, 1.2m廓

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N 沟道，逻辑电平，PowerTrench® MOSFET，40 V，110 A，1.2 mΩ

N-Channel Logic Level PowerTrench짰 MOSFET

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Multicomponent Dynamometer –5 ... 10 kN, top plate 100x170 mm

COUPLINGS

Features • Aluminum flanges with Stainless Steel Bellows for corrosion resistance. • High torque capability • Easy, clamp-style shaft attachment • Available in a variety of sizes

Wire Protector Terminal Blocks

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Sample Development Design Kits for High Speed Cabling and Connectors

文件：1.27402 Mbytes Page：3 Pages

MACHINE SCREW PAN PHILLIPS 10-32

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