丝印代码：FCPF190N60E；MOSFET – N-Channel, SUPERFET II 600 V, 20.6 A, 190 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

600V N-Channel MOSFET

Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

isc N-Channel MOSFET Transistor

文件：314.4 Kbytes Page：2 Pages

FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 20.6 A, 190 m廓

文件：647.03 Kbytes Page：10 Pages

功率 MOSFET，N 沟道，SUPERFET® II，Easy Drive，600 V，20.6 A，190 mΩ，TO-220F

Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F Ultra narrow lead

FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 20.6 A, 190 m廓

文件：647.03 Kbytes Page：10 Pages

isc N-Channel MOSFET Transistor

文件：292.36 Kbytes Page：2 Pages

600V N-Channel MOSFET

Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

N-Channel SuperFET II MOSFET

文件：342.71 Kbytes Page：10 Pages

isc N-Channel MOSFET Transistor

文件：301.63 Kbytes Page：2 Pages