DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

N-Channel SuperFET II MOSFET

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isc N-Channel MOSFET Transistor

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600V N-Channel MOSFET

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FCP190N60 / FCPF190N60 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 m廓

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功率 MOSFET，N 沟道，SUPERFET® II，FAST，600 V，20.2 A，199 mΩ，TO-220

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

600V N-Channel MOSFET

Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

N-Channel SuperFET II MOSFET

文件：342.71 Kbytes Page：10 Pages

N-Channel SuperFET짰 II MOSFET

文件：663.07 Kbytes Page：9 Pages

FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 20.6 A, 190 m廓

文件：647.03 Kbytes Page：10 Pages

功率 MOSFET，N 沟道，SUPERFET® II，Easy Drive，600 V，20.6 A，190 mΩ，TO-220