DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

600V N-Channel MOSFET

Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20.6A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.19Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

功率 MOSFET，N 沟道，SUPERFET® II，Easy Drive，600 V，20.6 A，190 mΩ，TO-220

SuperFET® II MOSFET 是飞兆利用电荷平衡技术实现出色的低导通电阻和更低栅极电荷性能的全新高压超级结 (SJ) MOSFET 系列产品。 这项技术专用于最小化导通损耗并提供卓越的开关性能、dv/dt 额定值和更高雪崩能量。 因此，SuperFET II MOSFET 非常适合开关电源应用，如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX 电源及工业电源应用。 •650V @TJ = 150°C\n•最大值 RDS(on) = 190mΩ\n•超低栅极电荷（典型值 Qg = 63nC )\n•低有效输出电容（典型值 Coss.eff = 178pF )\n•100% 经过雪崩击穿测试;

FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 20.6 A, 190 m廓

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isc N-Channel MOSFET Transistor

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N-Channel SuperFET II MOSFET

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DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

isc N-Channel MOSFET Transistor

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