丝印代码：FCPF190N60；N-Channel SuperFET® II MOSFET 600 V, 20.2 A, 199 mΩ

Description SuperFET®II MOSFET is ON Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resis-tance and lower gate charge performance. This advanced tech-nology is tailored to minimize conductio

丝印代码：FCPF190N60；MOSFET – N-Channel, SUPERFET II 600 V, 20.2 A, 199 m

Description SUPERFET II MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch

功率 MOSFET，N 沟道，SUPERFET® II，FAST，600 V，20.2 A，199 mΩ，TO-220F

SuperFET®II MOSFET 是飞兆半导体全新的高电压超级结 MOSFET 系列产品，采用先进的电荷平衡技术，实现极低的通态电阻和更低的栅极电荷。 该先进 MOSFET 经专门设计，不仅可最大程度地减少传导损耗，而且还能实现卓越的开关性能。 除了这些优势，与传统的超级结 MOSFET 相比，该产品还可耐受极高的 dv/dt 和较高的雪崩能量。 SuperFET II MOSFET 适用于系统小型化和高效化场景的各种开关电源应用。 •TJ = 150°C 时为 650 V\n•最大值 RDS(on) = 199mΩ\n•超低栅极电荷（典型值 Qg = 57nC )\n•低有效输出电容（典型值 Coss.eff = 160pF )\n•100% 经过雪崩击穿测试;

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

FCP190N60 / FCPF190N60 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 m廓

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600V N-Channel MOSFET

文件：327.51 Kbytes Page：10 Pages

isc N-Channel MOSFET Transistor

文件：292.36 Kbytes Page：2 Pages

N-Channel SuperFET II MOSFET

文件：342.71 Kbytes Page：10 Pages

丝印代码：FCPF190N60E；MOSFET – N-Channel, SUPERFET II 600 V, 20.6 A, 190 m

Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide super

600V N-Channel MOSFET

Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

功率 MOSFET，N 沟道，SUPERFET® II，Easy Drive，600 V，20.6 A，190 mΩ，TO-220F

SuperFET® II MOSFET 是飞兆利用电荷平衡技术实现出色的低导通电阻和更低栅极电荷性能的全新高压超级结 (SJ) MOSFET 系列产品。 这项技术专用于最小化导通损耗并提供卓越的开关性能、dv/dt 额定值和更高雪崩能量。 因此，SuperFET II MOSFET 非常适合开关电源应用，如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX 电源及工业电源应用。 •650V @TJ = 150°C\n•最大值 RDS(on) = 190mΩ\n•超低栅极电荷（典型值 Qg = 63nC )\n•低有效输出电容（典型值 Coss.eff = 178pF )\n•100% 经过雪崩击穿测试;

Power MOSFET, N-Channel, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F Ultra narrow lead

SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching perfo •Ultra low gate charge ( Typ. Qg = 63nC )\n• Lower switching loss\n•Low effective output capacitance ( Typ. Coss.eff = 178pF )\n• Lower switching loss\n•650V @TJ = 150°C\n•Max. RDS(on) = 190mΩ\n•100% avalanche tested;

FCP190N60 / FCPF190N60 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 m廓

文件：655.65 Kbytes Page：10 Pages

isc N-Channel MOSFET Transistor

文件：314.4 Kbytes Page：2 Pages

FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 20.6 A, 190 m廓

文件：647.03 Kbytes Page：10 Pages

FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 20.6 A, 190 m廓

文件：647.03 Kbytes Page：10 Pages

600V N-Channel MOSFET

Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide s

N-Channel SuperFET II MOSFET

文件：342.71 Kbytes Page：10 Pages

isc N-Channel MOSFET Transistor

文件：301.63 Kbytes Page：2 Pages