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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel MOSFET Transistor • DESCRIPTION • Ultra low gate charge • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.38Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 |   | ||
Cool MOS??Power Transistor Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for ta | Infineon 英飞凌 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.033599 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated 文件：1.01964 Mbytes Page：15 Pages | Infineon 英飞凌 | | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology 文件：574.74 Kbytes Page：15 Pages | Infineon 英飞凌 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
英飞凌 |
24+/25+ |
TO-220F |
5000 |
原装正品现货库存价优 |
|||
INFINEON/英飞凌 |
25+ |
原装 |
32360 |
INFINEON/英飞凌全新特价SPA11N65C3即刻询购立享优惠#长期有货 |
|||
INF |
1640+ |
TO-220F |
950 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
Infineon |
2025+ |
TO-220F |
5425 |
全新原厂原装产品、公司现货销售 |
|||
INFINEON/英飞凌 |
2023+ |
TO-220FP |
6895 |
原厂全新正品旗舰店优势现货 |
|||
INFINEON |
23+ |
TO-220F |
65400 |
||||
INFINEON/英飞凌 |
24+ |
TO220F |
18527 |
原装进口假一罚十 |
|||
Infineon(英飞凌) |
23+ |
PG-TO220FP |
19850 |
原装正品,假一赔十 |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
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FCPF11N65C3规格书下载地址
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2019-9-11
DdatasheetPDF页码索引
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