丝印代码：FCPF11N60；N-Channel SuperFET® MOSFET

General Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

SuperFET

General Description SuperFET™ is a new generation of high voltage MOSFETs from Fairchild with outstanding low on-resistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. This advanced technology has been tailored to minimize cond

PFCPWM Combination Controller

Introduction This application note describes step-by-step design considerations for a power supply using the FAN480X controller. The FAN480X combines a PFC controller and a PWM controller. The PFC controller employs average current mode control for Continuous Conduction Mode (CCM) boost converter

功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，11 A，380 mΩ，TO-220F

SuperFET® MOSFET 是 Fairchild Semiconductor 的第一代高压超结 (SJ) MOSFET 系列，利用电荷平衡技术实现出色的低导通电阻，以及更低门极电荷方面的卓越性能。此技术专用于最大程度降低导电损耗，提供卓越的开关性能、dv/dt 速率和更高的雪崩能量。因此，SuperFET MOSFET 非常适用于开关电源应用，如 PFC、服务器/电信电源、FPD TV 电源、ATX 电源和工业电源应用。 •650V @Tj = 150°C\n•典型值 Rds(on) = 0.32 Ω\n•超低栅极电荷（典型值 Qg=40nC)\n•低有效输出电容（典型值 Coss.eff = 95 pF）\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

Power Factor Correction Converter Design

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丝印代码：FCPF11N60F；N-Channel SuperFET® FRFET® MOSFET 600 V, 11 A, 380 mΩ

Features • 600 V @ TJ = 150°C • Typ. RDS(on) = 320 mΩ • Fast Recovery Type (trr = 120 ns) • Ultra Low Gate Charge (Typ. Qg = 40 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF) • 100% Avalanche Tested • RoHS compliant Applications • LCD/LED/PDP TV • Solar Inverter

丝印代码：FCPF11N60T；N-Channel SuperFET® MOSFET

General Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

600V N-Channel MOSFET

Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, pro

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

N-Channel MOSFET 600V, 10.8A, 0.299廓

Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs,employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world

功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，10.8 A，299 mΩ，TO-220F

SupreMOS® MOSFET 是飞兆半导体的下一代高压超级结（SJ）技术，该技术采用区别于传统 SJ MOSFET 产品的深沟槽填充工艺。这项先进技术和精密的工艺控制提供了最低的 Rsp on-resistance（导通电阻规格），卓越的开关性能和耐用性。SupreMOS MOSFET 技术适用于高频开关电源转换器应用，如功率因数校正(PFC)、服务器/电信电源、平板电视电源、ATX 电源及工业电源应用。 •RDS(on) = 255mΩ （典型值）@ VGS = 10V, ID = 5.4A\n•超低栅极电荷（典型值Qg = 27.4nC )\n•低有效输出电容（典型值Coss.eff = 130pF )\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

功率 MOSFET，N 沟道，SUPERFET®, Easy Drive，600 V，11 A，380 mΩ，TO-220F

SuperFET® MOSFET 是 Fairchild Semiconductor 的第一代高压超结 (SJ) MOSFET 系列，利用电荷平衡技术实现出色的低导通电阻，以及更低门极电荷方面的卓越性能。此技术专用于最大程度降低导电损耗，提供卓越的开关性能、dv/dt 速率和更高的雪崩能量。因此，SuperFET MOSFET 非常适用于开关电源应用，如 PFC、服务器/电信电源、FPD TV 电源、ATX 电源和工业电源应用。 •650V @Tj = 150°C\n•典型值 Rds(on) = 0.32 Ω\n•超低栅极电荷（典型值 Qg=40nC)\n•低有效输出电容（典型值 Coss.eff=95pF)\n•100% 经过雪崩击穿测试\n•符合 RoHS 标准;

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

General Description

General Description SuperFET™ is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction los

isc N-Channel MOSFET Transistor

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Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

SHORT CIRCUIT RATED LOW ON-VOLTAGE

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

SHORT CIRCUIT RATED LOW ON-VOLTAGE

Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge • Pb-free lead plating; RoHS compliant • Qualified accordi