Features

• 600 V @ TJ = 150°C

• Typ. RDS(on) = 320 mΩ

• Fast Recovery Type (trr = 120 ns)

• Ultra Low Gate Charge (Typ. Qg = 40 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF)

• 100% Avalanche Tested

• RoHS compliant

Applications

• LCD/LED/PDP TV

• Solar Inverter

• Lighting

• AC-DC Power Supply

Description

SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Super-FET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.