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SPW11N60CFD价格
参考价格：￥11.9335
型号：SPW11N60CFD 品牌：Infineon 备注：这里有SPW11N60CFD多少钱，2026年最近7天走势，今日出价，今日竞价，SPW11N60CFD批发/采购报价，SPW11N60CFD行情走势销售排行榜，SPW11N60CFD报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SPW11N60CFD | Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge • Pb-free lead plating; RoHS compliant • Qualified accordi | INFINEON 英飞凌 |   | |
SPW11N60CFD | isc N-Channel MOSFET Transistor • DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤440mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
SPW11N60CFD | 500 V-950 V CoolMOS™ N 沟道功率 MOSFET | INFINEON 英飞凌 | | |
SPW11N60CFD | Cool MOS??Power Transistor 文件：753.64 Kbytes Page：13 Pages | INFINEON 英飞凌 | | |
Cool MOS??Power Transistor 文件：753.64 Kbytes Page：13 Pages | INFINEON 英飞凌 | | ||
Insulated Gate Bipolar Transistor Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications | MOTOROLA 摩托罗拉 | | ||
SHORT CIRCUIT RATED LOW ON-VOLTAGE Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications | ONSEMI 安森美半导体 | | ||
SHORT CIRCUIT RATED LOW ON-VOLTAGE Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–block | ONSEMI 安森美半导体 | | ||
Cool MOS??Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge | INFINEON 英飞凌 | |
SPW11N60CFD产品属性
- 类型
描述
- 型号
SPW11N60CFD
- 功能描述
MOSFET COOL MOS N-CH 650V 11A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
N/A |
9855 |
原装正品现货支持实单 |
|||
INFINEON |
23+ |
TO247 |
6996 |
只做原装正品现货 |
|||
英飞翎 |
20+ |
TO-247 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON |
23+ |
TO-247 |
65400 |
||||
INFINEON |
22+ |
TO247-3 |
8000 |
原装现货库存.价格优势 |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
INFINEON |
08;024+ |
TO-247 |
90 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON |
26+ |
TO3P |
12335 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
英飞翎 |
17+ |
TO-247 |
31518 |
原装正品 可含税交易 |
|||
infineo |
25+ |
TO-3P |
480 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
SPW11N60CFD规格书下载地址
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DdatasheetPDF页码索引
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