isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 165mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

功率 MOSFET，N 沟道，SUPERFET® III，Easy Drive，650 V，19 A，165 mΩ，TO-220

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 19A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 165mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 19 A, 165 m

文件：392.96 Kbytes Page：10 Pages

Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220

MOSFET - Power, N?륝hannel, SUPERFET III, FAST

文件：230.78 Kbytes Page：10 Pages

MOSFET - Power, N?륝hannel, SUPERFET III, FAST 650 V, 165 m, 19 A

文件：218.77 Kbytes Page：10 Pages