封装/外壳：轴向 包装：卷带（TR） 描述：DIODE TVS 180VR 2200W FOLDBACK 电路保护 TVS - 混合技术

Power MOSFET

Description Fifth Generation, high current density HEXFETS are paralled into a compact, high power module providing the best combination of switching, ruggedized design, very low ON resistance and cost effectiveness. The isolated SOT-227 package is preferred for all commercial - industrial appli

Power MOSFET, 180 A

FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance • Low internal inductance • UL pending • Compliant to RoHS directive 2002/95/EC DESCRIPTION

Power MOSFET, 180 A

FEATURES • Fully isolated package • Easy to use and parallel • Very low on-resistance • Dynamic dV/dt rating • Fully avalanche rated • Simple drive requirements • Low drain to case capacitance • Low internal inductance • UL pending • Compliant to RoHS directive 2002/95/EC DESCRIPTION

Power MOSFET, 180 A

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SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

1.3 Watts Axial Leaded Zener Diodes

VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

POWER INDUCTOR

●FEATURE 1. Excellent solder heat resistance(add “C” is for high current type) 2. Low voltage drops and small variations inductance ●APPLICATION 1. DC power supply circuits 2. Power line choke coils…etc

WIRE WOUND SMD INDUCTOR

●FEATURE 1. Low core loss for high frequency power application 2. Large terminal surface ●APPLICATION 1. Portable communication equipment, notebook computer

THREADED INSERT, THRU, REGULAR HEAD STYLE

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