FEATURES

• Fully isolated package

• Easy to use and parallel

• Very low on-resistance

• Dynamic dV/dt rating

• Fully avalanche rated

• Simple drive requirements

• Low drain to case capacitance

• Low internal inductance

• UL pending

• Compliant to RoHS directive 2002/95/EC

DESCRIPTION

5th Generation, high current density Power MOSFETs are

paralled into a compact, high power module providing the

best combination of switching, ruggedized design, very low

on resistance and cost effectiveness.

The isolated SOT-227 package is preferred for all

commercial-industrial applications at power dissipation

levels to approximately 500 W. The low thermal resistance

and easy connection to the SOT-227 package contribute to

its universal acceptance throughout the industry.