| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HEXFET짰 Power MOSFET VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve | IRF |   | ||
AUTOMOTIVE MOSFET VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve | IRF | | ||
AUTOMOTIVE GRADE 文件：360.7 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
AUTOMOTIVE GRADE 文件：360.7 Kbytes Page：11 Pages | Infineon 英飞凌 | | ||
Advanced Process Technology 文件：298.26 Kbytes Page：11 Pages | IRF | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
Infineon/英飞凌 |
21+ |
D2PAK-7 |
6820 |
只做原装,质量保证 |
|||
IR |
20+ |
TO-263-7 |
20500 |
汽车电子原装主营-可开原型号增税票 |
|||
INFINEON |
2021+ |
D2PAK7PD2PAK7P |
10000 |
只做原装，可提供样品 |
|||
Infineon/英飞凌 |
24+ |
D2PAK-7 |
25000 |
原装正品,假一赔十! |
|||
INFINEON |
24+ |
TO263-7 |
1000 |
市场最低 原装现货 假一罚百 可开原型号 |
|||
Infineon/英飞凌 |
24+ |
D2PAK-7 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
IR |
23+ |
TO-263-7 |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
IR |
23+ |
TO-263-7 |
8000 |
专注配单,只做原装进口现货 |
|||
IR |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
F2804S-7P规格书下载地址
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DdatasheetPDF页码索引
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