丝印代码：F175；QUADRUPLE D-TYPE FLIP-FLOP WITH CLEAR

Contains Four Flip-Flops With Double-Rail Outputs Buffered Clock and Direct Clear Inputs Applications Include: – Buffer/Storage Registers – Shift Registers – Pattern Generators description This positive-edge-triggered flip-flop utilizes TTL circuitry to implement D-type flip-flop logic

丝印代码：F175；QUADRUPLE D-TYPE FLIP-FLOP WITH CLEAR

Contains Four Flip-Flops With Double-Rail Outputs Buffered Clock and Direct Clear Inputs Applications Include: – Buffer/Storage Registers – Shift Registers – Pattern Generators description This positive-edge-triggered flip-flop utilizes TTL circuitry to implement D-type flip-flop logic

丝印代码：F175；QUADRUPLE D-TYPE FLIP-FLOP WITH CLEAR

Contains Four Flip-Flops With Double-Rail Outputs Buffered Clock and Direct Clear Inputs Applications Include: – Buffer/Storage Registers – Shift Registers – Pattern Generators description This positive-edge-triggered flip-flop utilizes TTL circuitry to implement D-type flip-flop logic

QUADRUPLE D-TYPE FLIP-FLOP WITH CLEAR

文件：359.72 Kbytes Page：12 Pages

Standard Probe 100 mil

文件：680.39 Kbytes Page：4 Pages

QUADRUPLE D-TYPE FLIP-FLOP WITH CLEAR

Ultra-linear Single-channel Mixer for Rx Applications

The IDT F1701, F1751, and F1763 are a pin-compatible series of RF to IF Single Channel Downconverting Mixers ideal for many Receiver (Rx) applications. These devices employ Zero-Distortion™ technology to practically eliminate the 3rd order intermodulation response.  These devices feature high gain ( Single Mixer Ideal for Multi-Carrier Systems\n3 versions cover 700 - 2700 MHz\nLowside or Highside LO\n11.8dB Gain\nUltra linear +43dBm IP3O using HS LO or +37.5 dBm IP3O using LSLO\n9.7dB NF\n200 Ω output impedance\nWide flat-performance IF BW\nDrives ADC directly for DPD applications\nLow Power Co;

Ideal for Multi-Carrier Systems

FEATURES  Ideal for Multi-Carrier Systems  Lowside or Highside LO  11.8dB Gain  Ultra linear +43dBm IP3O using HS LO or +37.5 dBm IP3O using LS LO  9.7dB NF  200 Ω output impedance  Wide flat-performance IF BW  Drives ADC directly for DPD applications  Low Power Consumption  5

Ideal for Multi-Carrier Systems

FEATURES  Ideal for Multi-Carrier Systems  Lowside or Highside LO  11.7dB Gain  Ultra linear +45dBm IP3O using HS LO or +42dBm IP3O using LS LO  9.7 dB NF  200 Ω output impedance  Wide flat performance IF BW  Drives ADC directly for DPD applications  Low Power Consumption  5x5

Suppression Inductors, VHF Inductors

文件：67.51 Kbytes Page：1 Pages

Suppression Inductors, VHF Inductors

文件：67.51 Kbytes Page：1 Pages

Suppression Inductors, VHF Inductors

文件：67.51 Kbytes Page：1 Pages

Suppression Inductors, VHF Inductors

文件：67.51 Kbytes Page：1 Pages

Suppression Inductors, VHF Inductors

文件：67.51 Kbytes Page：1 Pages

Suppression Inductors, VHF Inductors

文件：67.51 Kbytes Page：1 Pages

Suppression Inductors, VHF Inductors

文件：67.51 Kbytes Page：1 Pages

Suppression Inductors, VHF Inductors

文件：67.51 Kbytes Page：1 Pages

Suppression Inductors, VHF Inductors

文件：67.51 Kbytes Page：1 Pages

Suppression Inductors, VHF Inductors

文件：67.51 Kbytes Page：1 Pages

Suppression Inductors, VHF Inductors

文件：67.51 Kbytes Page：1 Pages

Standard Probe 100 mil

文件：680.39 Kbytes Page：4 Pages

Ideal for Multi-Carrier Systems

文件：1.16533 Mbytes Page：25 Pages

RF to IF Single Downconverting Mixer

文件：1.19467 Mbytes Page：24 Pages

封装/外壳：20-WQFN 裸露焊盘 包装：托盘 描述：IC MIXER 1.4-2.5GHZ 20VFQFPN RF/IF，射频/中频和 RFID 射频混频器

封装/外壳：20-WQFN 裸露焊盘 包装：卷带（TR）带 描述：VFQFPN 5.00X5.00X0.80 MM, 0.65MM RF/IF，射频/中频和 RFID 射频混频器

F-SERIES RFI SUPPRESSION FOR SINGLE PHASE POWER REGULATORS

文件：68.08 Kbytes Page：2 Pages

F-SERIES RFI SUPPRESSION FOR SINGLE PHASE POWER REGULATORS

文件：68.14 Kbytes Page：2 Pages

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance

Silicon Complementary Transistors High Voltage, Medium Power Switch

Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Fea

L-Band PA DRIVER AMPLIFIER

DESCRIPTION µPG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. FEATURES • Low Operation Voltage: