ESD4价格
参考价格:¥1.9518
型号:ESD4-DFN-LF-T73 品牌:PROTEK DEVICES 备注:这里有ESD4多少钱,2026年最近7天走势,今日出价,今日竞价,ESD4批发/采购报价,ESD4行情走势销售排行榜,ESD4报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ESD4 | Circuit Protection Solutions Low Voltage Fuse Links Catalogue 文件:4.91849 Mbytes Page:55 Pages | COOPER | ||
ESD4 | ESD BS88 Offset blade tags 文件:88.05 Kbytes Page:4 Pages | COOPER | ||
ESD4 | ESD BS88 Offset blade tags 文件:88.05 Kbytes Page:4 Pages | EATON 伊顿 | ||
Transient Voltage Suppressors for ESD Protection Features 4400W peak pulse power (8/20us) Operating voltage: 4.5V Low leakage: nA level Ultra low clamping voltage RoHS Compliant IEC61000-4-2 (ESD)±30kV (air), ±30kV (contact) IEC61000-4-5 (Lightning)220A (8/20μs) Applications Power Management Industrial Application Power Supply Prote | UNSEMI 优恩半导体 | |||
丝印代码:45A;Transient Voltage Suppressors for ESD Protection Feature 3060 Watts Peak Pulse Power per Line (tp=8/20μs) Protects One Unidirectional I/O line Low Clamping Voltage Working voltages:4.5V Low leakage current IEC61000-4-2(ESD) ±30 kV (air discharge), ±30 kV (contact discharge); IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (LIGHTING) 170 A | UNSEMI 优恩半导体 | |||
丝印代码:D4;Transient Voltage Suppressors for ESD Protection Feature 1960 Watts Peak Pulse Power per Line (tp=8/20μs) Low clamping voltage Low leakage current IEC61000-4-2(ESD):±30kV (air discharge) ±30kV (contact discharge); IEC61000-4-4 (EFT) 40A (5/50ηs) Applications USB Ports Smart Phones Wireless Systems Power Port | UNSEMI 优恩半导体 | |||
丝印代码:UT4;Transient Voltage Suppressors for ESD Protection Features 2430 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one date or power line Working voltage: 4.5V RoHS Compliant IEC61000-4-5 (Lightning) 135A (8/20ns) IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) Applications Mobile Phones Battery Protection Power Line Protection Vba | UNSEMI 优恩半导体 | |||
丝印代码:45;Transient Voltage Suppressors for ESD Protection Features 495 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one Bidirectional I/O line Low clamping voltage Working voltages : 4.5V Low leakage current IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (LIGHTING) 45A (8/20μs) IEC61000-4-2(ESD) ±30kV (air discharge) ±30kV (contact dischar | UNSEMI 优恩半导体 | |||
ESD401 1-Channel ESD Protection Diode With Robust IEC ESD Performance 1 Features • Robust IEC 61000-4-2 level 4 ESD protection: – ±24kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 4.5A (8/20μs) – Low Vclamp of 12V at 1.8A IPP (8/20μs) • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • Bi-directional ESD diode to protect int | TI 德州仪器 | |||
丝印代码:8I;ESD401 1-Channel ESD Protection Diode With Robust IEC ESD Performance 1 Features • Robust IEC 61000-4-2 level 4 ESD protection: – ±24kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 4.5A (8/20μs) – Low Vclamp of 12V at 1.8A IPP (8/20μs) • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • Bi-directional ESD diode to protect int | TI 德州仪器 | |||
丝印代码:8I;ESD401 1-Channel ESD Protection Diode With Robust IEC ESD Performance 1 Features • Robust IEC 61000-4-2 level 4 ESD protection: – ±24kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 4.5A (8/20μs) – Low Vclamp of 12V at 1.8A IPP (8/20μs) • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • Bi-directional ESD diode to protect int | TI 德州仪器 | |||
丝印代码:8I;ESD401 1-Channel ESD Protection Diode With Robust IEC ESD Performance 1 Features • Robust IEC 61000-4-2 level 4 ESD protection: – ±24kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 4.5A (8/20μs) – Low Vclamp of 12V at 1.8A IPP (8/20μs) • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • Bi-directional ESD diode to protect int | TI 德州仪器 | |||
丝印代码:8I;ESD401 1-Channel ESD Protection Diode With Robust IEC ESD Performance 1 Features • Robust IEC 61000-4-2 level 4 ESD protection: – ±24kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 4.5A (8/20μs) – Low Vclamp of 12V at 1.8A IPP (8/20μs) • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • Bi-directional ESD diode to protect int | TI 德州仪器 | |||
1-Line Bi-directional TVS Diode Features Ultra small package: 1.0x0.6x0.5mm Ultra low capacitance:0.3pF typical Ultra low leakage: nA level Low operating voltage: +5V Low clamping voltage 2-pin leadless package Complies with following standards: ~ IEC 61000-4-2 (ESD) immunity test Air discharge: +20kV Contact discharge | TECHPUBLIC 台舟电子 | |||
丝印代码:JR;Transient Voltage Suppressors for ESD Protection Features 1000 Watts Peak Pulse Power per Line (tp=8/20μs) 200 Watts Peak Pulse Power per Line (tp=10/1000μs) Protects one I/O line or power line Low clamping voltage Working voltages : 5V to 190V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT) 80A (5/ | UNSEMI 优恩半导体 | |||
丝印代码:MR;Transient Voltage Suppressors for ESD Protection Features 1000 Watts Peak Pulse Power per Line (tp=8/20μs) 200 Watts Peak Pulse Power per Line (tp=10/1000μs) Protects one I/O line or power line Low clamping voltage Working voltages : 5V to 190V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT) 80A (5/ | UNSEMI 优恩半导体 | |||
ESD Clamp Array with ESD Protection The ESD4238 is ideal for protecting systems with high data and clock rates or for circuits requiring low capacitive loading and tightly controlled signal skews (with channel-to-channel matching at 2% max deviation). The device is particularly well-suited for protecting systems using high-speed p • ESD Protection for Four Pairs of Differential Channels\n• ESD protection to IEC6100042 Level 4; | ONSEMI 安森美半导体 | |||
丝印代码:JT;Transient Voltage Suppressors for ESD Protection Features 1000 Watts Peak Pulse Power per Line (tp=8/20μs) 200 Watts Peak Pulse Power per Line (tp=10/1000μs) Protects one I/O line or power line Low clamping voltage Working voltages : 5V to 190V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT) 80A (5/ | UNSEMI 优恩半导体 | |||
丝印代码:MT;Transient Voltage Suppressors for ESD Protection Features 1000 Watts Peak Pulse Power per Line (tp=8/20μs) 200 Watts Peak Pulse Power per Line (tp=10/1000μs) Protects one I/O line or power line Low clamping voltage Working voltages : 5V to 190V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT) 80A (5/ | UNSEMI 优恩半导体 | |||
ESD441 1-Channel ±30kV Unidirectional ESD Diode in an 0201 and 0402 Package 1 Features • IEC 61000-4-2 level 4 ESD protection – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection – 6A (8/20μs) • IO capacitance: – 1pF (typical) • DC breakdown voltage: 7V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD clam | TI 德州仪器 | |||
ESD441 1-Channel ±30 kV Unidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection – 6.2 A (8/20 μs) • IO capacitance: – 1 pF (typical) • DC breakdown voltage: 7 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremely low | TI 德州仪器 | |||
ESD441 1-Channel ±30 kV Unidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection – 4.4 A (8/20 μs) • IO capacitance: – 1 pF (typical) • DC breakdown voltage: 7 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremely low | TI 德州仪器 | |||
ESD441 1-Channel ±30 kV Unidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection – 6.2 A (8/20 μs) • IO capacitance: – 1 pF (typical) • DC breakdown voltage: 7 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremely low | TI 德州仪器 | |||
ESD441 1-Channel ±30 kV Unidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection – 6.2 A (8/20 μs) • IO capacitance: – 1 pF (typical) • DC breakdown voltage: 7 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremely low | TI 德州仪器 | |||
ESD441 1-Channel ±30kV Unidirectional ESD Diode in an 0201 and 0402 Package 1 Features • IEC 61000-4-2 level 4 ESD protection – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection – 6A (8/20μs) • IO capacitance: – 1pF (typical) • DC breakdown voltage: 7V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD clam | TI 德州仪器 | |||
ESD441 1-Channel ±30kV Unidirectional ESD Diode in an 0201 and 0402 Package 1 Features • IEC 61000-4-2 level 4 ESD protection – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection – 6A (8/20μs) • IO capacitance: – 1pF (typical) • DC breakdown voltage: 7V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD clam | TI 德州仪器 | |||
丝印代码:E;ESD441 1-Channel ±30 kV Unidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection – 6.2 A (8/20 μs) • IO capacitance: – 1 pF (typical) • DC breakdown voltage: 7 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremely low | TI 德州仪器 | |||
ESD441 1-Channel ±30 kV Unidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection – 6.2 A (8/20 μs) • IO capacitance: – 1 pF (typical) • DC breakdown voltage: 7 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremely low | TI 德州仪器 | |||
ESD441 1-Channel ±30 kV Unidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection – 6.2 A (8/20 μs) • IO capacitance: – 1 pF (typical) • DC breakdown voltage: 7 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremely low | TI 德州仪器 | |||
ESD441 1-Channel ±30kV Unidirectional ESD Diode in an 0201 and 0402 Package 1 Features • IEC 61000-4-2 level 4 ESD protection – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection – 6A (8/20μs) • IO capacitance: – 1pF (typical) • DC breakdown voltage: 7V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD clam | TI 德州仪器 | |||
Uni-directional Ultra-Low Capacitance ESD Protection Features ® Ultra small package: 0.6x0.3x0 3mm @ Ultra low capacitance:0.5pF typical © Ultra low leakage: nA level @ Low operating voltage: 5 5V ® Low clamping voltage ® 2-pin leadless package ® Complies with following standards: ® — [EC 61000-4-2 (ESD) immunity test Air di | TECHPUBLIC 台舟电子 | |||
ESD441 1-Channel ±30kV Unidirectional ESD Diode in an 0201 and 0402 Package 1 Features • IEC 61000-4-2 level 4 ESD protection – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection – 6A (8/20μs) • IO capacitance: – 1pF (typical) • DC breakdown voltage: 7V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD clam | TI 德州仪器 | |||
ESD451 1-Channel ±30kV Bidirectional ESD Diode in an 0201 and 0402 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: – 0.5pF (typical) • DC breakdown voltage: ±8V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD | TI 德州仪器 | |||
ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection – 4.4 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremely | TI 德州仪器 | |||
ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel | TI 德州仪器 | |||
ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel | TI 德州仪器 | |||
采用 0201 封装的 0.5pF、5.5V、30KV 双向 ESD 保护器件 ESD451 是一款双向 ESD 保护二极管,用于保护数据线路和其他 I/O 端口。 ESD451 的额定 ESD 冲击消散值高达 ±30kV,符合 IEC 61000-4-2 国际标准(高于 4 级)。\n\n该器件具有 0.5pF(典型值)IO 电容,可为 USB 3.0 等协议提供高速接口保护。超低的动态电阻 (0.19Ω) 和钳位电压(16A TLP 时为 10.4V)可针对瞬态事件提供系统级保护。\n\n该器件采用微型封装并具有 ±30kV ESD 等级和 6.2 A 浪涌,可提供强大的瞬态保护,用于保护便携式电子产品和其他空间受限类应用(如可穿戴设备)中的 5.5V 电源轨和数据线 • IEC 61000-4-2 level 4 ESD protection \n• ±30 kV air gap discharge\n• IEC 61000-4-5 surge protection \n• IO capacitance: \n• DC breakdown voltage: ±8 V (typical)\n• Extremely low ESD clamping voltage \n• R DYN: 0.19 Ω\n• Industrial temperature range: –40°C to +125°C\n• Space-saving industry standar; | TI 德州仪器 | |||
ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel | TI 德州仪器 | |||
ESD451 1-Channel ±30kV Bidirectional ESD Diode in an 0201 and 0402 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: – 0.5pF (typical) • DC breakdown voltage: ±8V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD | TI 德州仪器 | |||
丝印代码:G;ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel | TI 德州仪器 | |||
ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel | TI 德州仪器 | |||
ESD451 1-Channel ±30kV Bidirectional ESD Diode in an 0201 and 0402 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: – 0.5pF (typical) • DC breakdown voltage: ±8V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD | TI 德州仪器 | |||
ESD451 1-Channel ±30kV Bidirectional ESD Diode in an 0201 and 0402 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: – 0.5pF (typical) • DC breakdown voltage: ±8V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD | TI 德州仪器 | |||
ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel | TI 德州仪器 | |||
ESD451 1-Channel ±30kV Bidirectional ESD Diode in an 0201 and 0402 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: – 0.5pF (typical) • DC breakdown voltage: ±8V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD | TI 德州仪器 | |||
ESD451W-Q1 Automotive 1-Channel ±30kV Bidirectional ESD Diode in a Wettable Flank 0402 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • ISO 10605 (150pF, 330Ω & 330pF, 330Ω) ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: – 0.5pF (ty | TI 德州仪器 | |||
ESD451W-Q1 Automotive 1-Channel ±30kV Bidirectional ESD Diode in a Wettable Flank 0402 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • ISO 10605 (150pF, 330Ω & 330pF, 330Ω) ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: – 0.5pF (ty | TI 德州仪器 | |||
丝印代码:JV;Transient Voltage Suppressors for ESD Protection Features 1000 Watts Peak Pulse Power per Line (tp=8/20μs) 200 Watts Peak Pulse Power per Line (tp=10/1000μs) Protects one I/O line or power line Low clamping voltage Working voltages : 5V to 190V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT) 80A (5/ | UNSEMI 优恩半导体 | |||
丝印代码:MV;Transient Voltage Suppressors for ESD Protection Features 1000 Watts Peak Pulse Power per Line (tp=8/20μs) 200 Watts Peak Pulse Power per Line (tp=10/1000μs) Protects one I/O line or power line Low clamping voltage Working voltages : 5V to 190V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT) 80A (5/ | UNSEMI 优恩半导体 | |||
丝印代码:JX;Transient Voltage Suppressors for ESD Protection Features 1000 Watts Peak Pulse Power per Line (tp=8/20μs) 200 Watts Peak Pulse Power per Line (tp=10/1000μs) Protects one I/O line or power line Low clamping voltage Working voltages : 5V to 190V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT) 80A (5/ | UNSEMI 优恩半导体 | |||
丝印代码:MX;Transient Voltage Suppressors for ESD Protection Features 1000 Watts Peak Pulse Power per Line (tp=8/20μs) 200 Watts Peak Pulse Power per Line (tp=10/1000μs) Protects one I/O line or power line Low clamping voltage Working voltages : 5V to 190V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT) 80A (5/ | UNSEMI 优恩半导体 | |||
丝印代码:2P;Transient Voltage Suppressors for ESD Protection Feature 255~416 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one I/O line or power line(Bidirectional) Low clamping voltage Working voltages:3.3V ~ 48V Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact): 3.3V ~ 18V); IEC61000-4-2 (ESD) ±15kV (air), ±15kV (contact): | UNSEMI 优恩半导体 | |||
丝印代码:2P;Transient Voltage Suppressors for ESD Protection Feature Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 255~410 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one bidirectional I/O line or power line Low Clamping Voltage Working Voltages: 3.3V~48V Low leakage current IEC61000-4-4 (EFT): 40A (5/50ηs) IEC61000-4-2(ESD) ±30kV | UNSEMI 优恩半导体 | |||
丝印代码:UTK;Transient Voltage Suppressors for ESD Protection Features 1098~ 1980 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one I/O line (unidirectional) Low clamping voltage Working voltages: 3.3V~48V Low leakage current IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (Lighting) 13.8 ~ 100A (8/20μs) IEC61000-4-2 (ESD) ±30kV (air), ±30kV (con | UNSEMI 优恩半导体 | |||
丝印代码:UTK;Transient Voltage Suppressors for ESD Protection Features Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 1098~1980 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one unidirectional I/O line Working Voltages: 3.3V~48V Low clamping voltage Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT) | UNSEMI 优恩半导体 | |||
丝印代码:4V5D;SMD ESD Protection Diode Features - ESD/ transient protection of high speed data lines. IEC 61000-4-2 (ESD): ± 30kV (air), ± 30kV (contact). IEC 61000-4-4 (EFT): 40A (5/50ns). IEC 61000-4-5 (Lightning): 50A (8/20μs). - Low leakage current. - Low clamping voltage. - Protects one I/O or power line. - Low reverse sta | COMCHIP 典琦 | |||
ESD BS88 Offset blade tags 文件:88.05 Kbytes Page:4 Pages | COOPER | |||
Circuit Protection Solutions Low Voltage Fuse Links Catalogue 文件:4.91849 Mbytes Page:55 Pages | COOPER | |||
ESD BS88 Offset blade tags 文件:88.05 Kbytes Page:4 Pages | EATON 伊顿 | |||
1-Channel ESD Protection Diode With Robust IEC ESD Performance 文件:1.18303 Mbytes Page:17 Pages | TI 德州仪器 |
ESD4产品属性
- 类型
描述
- IO capacitance (Typ) (pF):
0.77
- Vrwm (V):
5.5
- IEC 61000-4-2 contact (+/- kV):
24
- IEC 61000-4-5 (A):
4.5
- Features:
—
- Bi-/uni-directional:
Bi-Directional
- IO leakage current (Max) (nA):
10
- Rating:
Catalog
- Operating temperature range (C):
-40 to 125
- Dynamic resistance (Typ) (Ω):
0.7
- Clamping voltage (V):
15
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
25+ |
X1-SON-2(0.6x1) |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
TI |
25+ |
X1-SON-2(0.6x1) |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
TI(德州仪器) |
2021+ |
8000 |
原装现货,欢迎询价 |
||||
TI |
2433 |
con |
286 |
现货常备产品原装可到京北通宇商城查价格 |
|||
SEMITEH |
24+ |
SOD-323 |
9700 |
绝对原装正品现货假一罚十 |
|||
PROTEK/普罗太克 |
23+ |
BGA-5 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
PROTEK |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
TI |
26+ |
n/a |
6000 |
芯为深圳现货 |
|||
CNNPCHIP/新晶微/RS |
2026+PB |
SOD-882 |
90000 |
全新Cnnpchip |
|||
Semitehelec |
25+ |
SOD-323 |
10065 |
原装正品,有挂有货,假一赔十 |
ESD4规格书下载地址
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DdatasheetPDF页码索引
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