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型号 功能描述 生产厂家 企业 LOGO 操作
ESD441

ESD441 1-Channel ±30 kV Unidirectional ESD Diode in an 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection – 4.4 A (8/20 μs) • IO capacitance: – 1 pF (typical) • DC breakdown voltage: 7 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremely low

TI

德州仪器

ESD441

ESD441 1-Channel ±30 kV Unidirectional ESD Diode in an 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection – 6.2 A (8/20 μs) • IO capacitance: – 1 pF (typical) • DC breakdown voltage: 7 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremely low

TI

德州仪器

ESD441

ESD441 1-Channel ±30 kV Unidirectional ESD Diode in an 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection – 6.2 A (8/20 μs) • IO capacitance: – 1 pF (typical) • DC breakdown voltage: 7 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremely low

TI

德州仪器

ESD441

ESD441 1-Channel ±30kV Unidirectional ESD Diode in an 0201 and 0402 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection – 6A (8/20μs) • IO capacitance: – 1pF (typical) • DC breakdown voltage: 7V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD clam

TI

德州仪器

ESD441_V01

ESD441 1-Channel ±30kV Unidirectional ESD Diode in an 0201 and 0402 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection – 6A (8/20μs) • IO capacitance: – 1pF (typical) • DC breakdown voltage: 7V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD clam

TI

德州仪器

ESD441_V01

ESD441 1-Channel ±30 kV Unidirectional ESD Diode in an 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection – 6.2 A (8/20 μs) • IO capacitance: – 1 pF (typical) • DC breakdown voltage: 7 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremely low

TI

德州仪器

ESD441DPLR

ESD441 1-Channel ±30kV Unidirectional ESD Diode in an 0201 and 0402 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection – 6A (8/20μs) • IO capacitance: – 1pF (typical) • DC breakdown voltage: 7V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD clam

TI

德州仪器

ESD441DPLR

ESD441 1-Channel ±30 kV Unidirectional ESD Diode in an 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection – 6.2 A (8/20 μs) • IO capacitance: – 1 pF (typical) • DC breakdown voltage: 7 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremely low

TI

德州仪器

ESD441DPLR

丝印代码：E；ESD441 1-Channel ±30 kV Unidirectional ESD Diode in an 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection – 6.2 A (8/20 μs) • IO capacitance: – 1 pF (typical) • DC breakdown voltage: 7 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremely low

TI

德州仪器

ESD441DPLR.B

ESD441 1-Channel ±30 kV Unidirectional ESD Diode in an 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection – 6.2 A (8/20 μs) • IO capacitance: – 1 pF (typical) • DC breakdown voltage: 7 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremely low

TI

德州仪器

ESD441DPLR.B

ESD441 1-Channel ±30kV Unidirectional ESD Diode in an 0201 and 0402 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection – 6A (8/20μs) • IO capacitance: – 1pF (typical) • DC breakdown voltage: 7V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD clam

TI

德州仪器

ESD441DPLR-TP

Uni-directional Ultra-Low Capacitance ESD Protection

Features ® Ultra small package: 0.6x0.3x0 3mm @ Ultra low capacitance:0.5pF typical © Ultra low leakage: nA level @ Low operating voltage: 5 5V ® Low clamping voltage ® 2-pin leadless package ® Complies with following standards: ® — [EC 61000-4-2 (ESD) immunity test Air di

TECHPUBLIC

台舟电子

ESD441DPYR

ESD441 1-Channel ±30kV Unidirectional ESD Diode in an 0201 and 0402 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection – 6A (8/20μs) • IO capacitance: – 1pF (typical) • DC breakdown voltage: 7V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD clam

TI

德州仪器

BD441

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . for amplifier and switching applications. Complementary types are BD438 and BD442.

MOTOROLA

摩托罗拉

C441PN

Phase Control SCR 750 Amperes Average 2400 Volts

Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, Hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ He

POWEREX

LF441C

LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS

Low Power JFET Input Operational Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products

ONSEMI

安森美半导体

LF441CD

LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS

Low Power JFET Input Operational Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products

ONSEMI

安森美半导体

LF441CN

LOW POWER JFET INPUT OPERATIONAL AMPLIFIERS

Low Power JFET Input Operational Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products

ONSEMI

安森美半导体

ESD441供应商更多...

更新时间：2026-5-20 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
万三科技(深圳)有限公司
ESD441DPLR
TI(德州仪器)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
询价
深圳市得捷芯城科技有限公司
ESD441DPLR
TI
25+
-
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
深圳市高捷芯城科技有限公司
ESD441DPYR
26+
10548
原厂订货渠道,支持账期,一站式服务!
询价

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