丝印代码：8I；ESD401 1-Channel ESD Protection Diode With Robust IEC ESD Performance

1 Features • Robust IEC 61000-4-2 level 4 ESD protection: – ±24kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 4.5A (8/20μs) – Low Vclamp of 12V at 1.8A IPP (8/20μs) • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • Bi-directional ESD diode to protect int

1-Channel ESD Protection Diode With Robust IEC ESD Performance

文件：1.18303 Mbytes Page：17 Pages

封装/外壳：0402（1006 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TVS DIODE 5.5VWM 24VC 2X1SON 电路保护 TVS - 二极管

丝印代码：8I；ESD401 1-Channel ESD Protection Diode With Robust IEC ESD Performance

1 Features • Robust IEC 61000-4-2 level 4 ESD protection: – ±24kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 4.5A (8/20μs) – Low Vclamp of 12V at 1.8A IPP (8/20μs) • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • Bi-directional ESD diode to protect int

丝印代码：8I；ESD401 1-Channel ESD Protection Diode With Robust IEC ESD Performance

1 Features • Robust IEC 61000-4-2 level 4 ESD protection: – ±24kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 4.5A (8/20μs) – Low Vclamp of 12V at 1.8A IPP (8/20μs) • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • Bi-directional ESD diode to protect int

丝印代码：8I；ESD401 1-Channel ESD Protection Diode With Robust IEC ESD Performance

1 Features • Robust IEC 61000-4-2 level 4 ESD protection: – ±24kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 4.5A (8/20μs) – Low Vclamp of 12V at 1.8A IPP (8/20μs) • IEC 61000-4-4 EFT protection: – 80A (5/50ns) • Bi-directional ESD diode to protect int

1-Line Bi-directional TVS Diode

Features Ultra small package: 1.0x0.6x0.5mm Ultra low capacitance:0.3pF typical Ultra low leakage: nA level Low operating voltage: +5V Low clamping voltage 2-pin leadless package Complies with following standards: ~ IEC 61000-4-2 (ESD) immunity test Air discharge: +20kV Contact discharge

IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances res

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages

Fast Settling, Wideband High-Gain Monolithic Op Amp

文件：388.71 Kbytes Page：6 Pages