ESD441 1-Channel ±30kV Unidirectional ESD Diode in an 0201 and 0402 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection – 6A (8/20μs) • IO capacitance: – 1pF (typical) • DC breakdown voltage: 7V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD clam

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Plastic Medium Power Silicon NPN Transistor . . . for amplifier and switching applications. Complementary types are BD438 and BD442.

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Description: Powerex Silicon Controlled Rectifers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, Hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ He

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Low Power JFET Input Operational Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products

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Low Power JFET Input Operational Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products

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Low Power JFET Input Operational Amplifiers These JFET input operational amplifiers are designed for low power applications. They feature high input impedance, low input bias current and low input offset current. Advanced design techniques allow for higher slew rates, gain bandwidth products