| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ESD451 | ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel | TI 德州仪器 | ||
ESD451 | ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection – 4.4 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremely | TI 德州仪器 | ||
ESD451 | ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel | TI 德州仪器 | ||
ESD451 | ESD451 1-Channel ±30kV Bidirectional ESD Diode in an 0201 and 0402 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: – 0.5pF (typical) • DC breakdown voltage: ±8V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD | TI 德州仪器 | ||
ESD451 | 采用 0201 封装的 0.5pF、5.5V、30KV 双向 ESD 保护器件 ESD451 是一款双向 ESD 保护二极管,用于保护数据线路和其他 I/O 端口。 ESD451 的额定 ESD 冲击消散值高达 ±30kV,符合 IEC 61000-4-2 国际标准(高于 4 级)。\n\n该器件具有 0.5pF(典型值)IO 电容,可为 USB 3.0 等协议提供高速接口保护。超低的动态电阻 (0.19Ω) 和钳位电压(16A TLP 时为 10.4V)可针对瞬态事件提供系统级保护。\n\n该器件采用微型封装并具有 ±30kV ESD 等级和 6.2 A 浪涌,可提供强大的瞬态保护,用于保护便携式电子产品和其他空间受限类应用(如可穿戴设备)中的 5.5V 电源轨和数据线 • IEC 61000-4-2 level 4 ESD protection \n• ±30 kV air gap discharge\n• IEC 61000-4-5 surge protection \n• IO capacitance: \n• DC breakdown voltage: ±8 V (typical)\n• Extremely low ESD clamping voltage \n• R DYN: 0.19 Ω\n• Industrial temperature range: –40°C to +125°C\n• Space-saving industry standar; | TI 德州仪器 | ||
ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel | TI 德州仪器 | |||
ESD451 1-Channel ±30kV Bidirectional ESD Diode in an 0201 and 0402 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: – 0.5pF (typical) • DC breakdown voltage: ±8V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD | TI 德州仪器 | |||
丝印代码:G;ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel | TI 德州仪器 | |||
ESD451 1-Channel ±30kV Bidirectional ESD Diode in an 0201 and 0402 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: – 0.5pF (typical) • DC breakdown voltage: ±8V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD | TI 德州仪器 | |||
ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel | TI 德州仪器 | |||
ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel | TI 德州仪器 | |||
ESD451 1-Channel ±30kV Bidirectional ESD Diode in an 0201 and 0402 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: – 0.5pF (typical) • DC breakdown voltage: ±8V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD | TI 德州仪器 | |||
ESD451 1-Channel ±30kV Bidirectional ESD Diode in an 0201 and 0402 Package 1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: – 0.5pF (typical) • DC breakdown voltage: ±8V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD | TI 德州仪器 | |||
丝印代码:48D;BIDIRECTIONAL TVS DIODE 文件:866.3 Kbytes Page:4 Pages | LEIDITECH 雷卯电子 | |||
丝印代码:42P;1-Line High Power TVS Diode 文件:2.42243 Mbytes Page:4 Pages | LEIDITECH 雷卯电子 | |||
GENERAL PURPOSE RECTIFIER
| POWEREX | |||
Phase Control SCR 1500 Amperes Average 2400 Volts Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H | POWEREX | |||
Single Supply, Low-Power, High Output, Programmable Buffer 文件:252.48 Kbytes Page:12 Pages | NSC 国半 | |||
Single Supply, Low-Power, High Output, Programmable Buffer 文件:252.48 Kbytes Page:12 Pages | NSC 国半 | |||
Silicon N-Channel JFET Transistor VHF/UHF Amplifier 文件:23.15 Kbytes Page:2 Pages | NTE |
ESD451产品属性
- 类型
描述
- Peak pulse power (8/20 μs) (max) (W):
57
- Vrwm (V):
5.5
- Bi-/uni-directional:
Bi-directional
- Number of channels:
1
- IO capacitance (typ) (pF):
0.5
- Clamping voltage (V):
10.4
- Breakdown voltage (min) (V):
7
- 封装:
X2SON (DPL)
- 引脚:
2
- 尺寸:
0.18 mm² 0.6 x 0.3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
25+ |
- |
20948 |
样件支持,可原厂排单订货! |
|||
TI |
25+ |
- |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
LEIDITECH/雷卯 |
2026+PB |
SOD-323 |
90000 |
全新Cnnpchip |
ESD451规格书下载地址
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ESD451数据表相关新闻
ESD03D6BU
深圳科雨电子有限公司,联系人:卢小姐 手机:18975515225 原装正品 大量现货,有需要的可以联系我 QQ:97877805 微信:wei555222777
2020-11-20ES9018JPA
深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱:yulin522@126.com 0755-83200050 15817287769 柯先生
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深圳科雨电子有限公司,联系人:卢小姐 手机:18975515225 原装正品 大量现货,有需要的可以联系我 QQ:97877805 微信:wei555222777
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DdatasheetPDF页码索引
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