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型号 功能描述 生产厂家 企业 LOGO 操作
ESD451

ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel

TI

德州仪器

ESD451

ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection – 4.4 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremely

TI

德州仪器

ESD451

ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel

TI

德州仪器

ESD451

ESD451 1-Channel ±30kV Bidirectional ESD Diode in an 0201 and 0402 Package

1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: – 0.5pF (typical) • DC breakdown voltage: ±8V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD

TI

德州仪器

ESD451

采用 0201 封装的 0.5pF、5.5V、30KV 双向 ESD 保护器件

ESD451 是一款双向 ESD 保护二极管,用于保护数据线路和其他 I/O 端口。 ESD451 的额定 ESD 冲击消散值高达 ±30kV,符合 IEC 61000-4-2 国际标准(高于 4 级)。\n\n该器件具有 0.5pF(典型值)IO 电容,可为 USB 3.0 等协议提供高速接口保护。超低的动态电阻 (0.19Ω) 和钳位电压(16A TLP 时为 10.4V)可针对瞬态事件提供系统级保护。\n\n该器件采用微型封装并具有 ±30kV ESD 等级和 6.2 A 浪涌,可提供强大的瞬态保护,用于保护便携式电子产品和其他空间受限类应用(如可穿戴设备)中的 5.5V 电源轨和数据线 • IEC 61000-4-2 level 4 ESD protection \n• ±30 kV air gap discharge\n• IEC 61000-4-5 surge protection \n• IO capacitance: \n• DC breakdown voltage: ±8 V (typical)\n• Extremely low ESD clamping voltage \n• R DYN: 0.19 Ω\n• Industrial temperature range: –40°C to +125°C\n• Space-saving industry standar;

TI

德州仪器

ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel

TI

德州仪器

ESD451 1-Channel ±30kV Bidirectional ESD Diode in an 0201 and 0402 Package

1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: – 0.5pF (typical) • DC breakdown voltage: ±8V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD

TI

德州仪器

丝印代码:G;ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel

TI

德州仪器

ESD451 1-Channel ±30kV Bidirectional ESD Diode in an 0201 and 0402 Package

1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: – 0.5pF (typical) • DC breakdown voltage: ±8V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD

TI

德州仪器

ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel

TI

德州仪器

ESD451 1-Channel ±30 kV Bidirectional ESD Diode in an 0201 Package

1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30 kV contact discharge – ±30 kV air gap discharge • IEC 61000-4-5 surge protection: – 6.2 A (8/20 μs) • IO capacitance: – 0.5 pF (typical) • DC breakdown voltage: ±8 V (typical) • Ultra low leakage current: 50 nA (maximum) • Extremel

TI

德州仪器

ESD451 1-Channel ±30kV Bidirectional ESD Diode in an 0201 and 0402 Package

1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: – 0.5pF (typical) • DC breakdown voltage: ±8V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD

TI

德州仪器

ESD451 1-Channel ±30kV Bidirectional ESD Diode in an 0201 and 0402 Package

1 Features • IEC 61000-4-2 level 4 ESD protection: – ±30kV contact discharge – ±30kV air gap discharge • IEC 61000-4-5 surge protection: – 6A (8/20μs) • IO capacitance: – 0.5pF (typical) • DC breakdown voltage: ±8V (typical) • Ultra low leakage current: 50nA (maximum) • Extremely low ESD

TI

德州仪器

丝印代码:48D;BIDIRECTIONAL TVS DIODE

文件:866.3 Kbytes Page:4 Pages

LEIDITECH

雷卯电子

丝印代码:42P;1-Line High Power TVS Diode

文件:2.42243 Mbytes Page:4 Pages

LEIDITECH

雷卯电子

GENERAL PURPOSE RECTIFIER

POWEREX

Phase Control SCR 1500 Amperes Average 2400 Volts

Description: Powerex Silicon Controlled Rectifiers(SCR) are designed for phase control applications. These are all-diffused, Press-Pak, hermetic Pow-R-Disc devices employing the field proven amplifying gate. Features: □ Low On-State Voltage □ High di/dt Capability □ High dv/dt Capability □ H

POWEREX

Single Supply, Low-Power, High Output, Programmable Buffer

文件:252.48 Kbytes Page:12 Pages

NSC

国半

Single Supply, Low-Power, High Output, Programmable Buffer

文件:252.48 Kbytes Page:12 Pages

NSC

国半

Silicon N-Channel JFET Transistor VHF/UHF Amplifier

文件:23.15 Kbytes Page:2 Pages

NTE

ESD451产品属性

  • 类型

    描述

  • Peak pulse power (8/20 μs) (max) (W):

    57

  • Vrwm (V):

    5.5

  • Bi-/uni-directional:

    Bi-directional

  • Number of channels:

    1

  • IO capacitance (typ) (pF):

    0.5

  • Clamping voltage (V):

    10.4

  • Breakdown voltage (min) (V):

    7

  • 封装:

    X2SON (DPL)

  • 引脚:

    2

  • 尺寸:

    0.18 mm² 0.6 x 0.3

更新时间:2026-5-20 14:35:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
25+
-
20948
样件支持,可原厂排单订货!
TI
25+
-
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
LEIDITECH/雷卯
2026+PB
SOD-323
90000
全新Cnnpchip

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