N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 125mΩ ID 14A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

Power MOSFETs-N Channel

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free

Power MOSFETs-N Channel

2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs

Description These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive

2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs

The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished th

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.35 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ SOT-223 CAN BE WAVE OR REFLOW SOLDERED ■ AVAILABLE IN TAPE AND REEL ON REQUEST ■ 150 °C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HARD DISK DRIVER

Drain Current ID= 2A@ TC=25C

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COMPLEMENTARY ENHANCEMENT MODE MOSFET

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