| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
EM20080 | Replacement Elements 文件：132.74 Kbytes Page：3 Pages | ANTEX |   | |
200 Amp Rectifier 20 to 100 Volts Schottky Barrier Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability | MCC | | ||
200 Amp Rectifier 20 to 100 Volts Schottky Barrier Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability | MCC | | ||
25 Watts, 1.6-1.7 GHz RF Power Transistor Description ThPTB 20080 is a class A/AB, NPN, silicon bipolar junction, internallymatched RF power transistor intended for 26 Vdc operation from 1.6 to 1.7 GHz. It is rated at 25 Watts minimum output power for PEP applications. Ion implantation, nitride surface passivation and gold metallization | ERICSSON 爱立信 | | ||
SCHOTTKY RECTIFIER 文件：206.7 Kbytes Page：7 Pages | IRF | | ||
SCHOTTKY DIODES MODULE TYPE 200A 文件：124.28 Kbytes Page：2 Pages | TEL | |
EM20080规格书下载地址
EM20080参数引脚图相关
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EM20080数据表相关新闻
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2020-4-6EM6325AXSP5B-1.4，EM6325CXSP5B-1.3，EM6325CXSP5B-1.3+，EM636165TS-10
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2019-9-24
DdatasheetPDF页码索引
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