MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS

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Long Life, Downsized, 125?

文件：374.87 Kbytes Page：2 Pages

Long Life, Downsized, 125?

文件：374.87 Kbytes Page：2 Pages

Long Life, Downsized, 125?

文件：374.87 Kbytes Page：2 Pages

Long Life, Downsized, 125?

文件：374.87 Kbytes Page：2 Pages

封装/外壳：径向，Can 包装：带盒（TB） 描述：CAP ALUM 22UF 20% 80V RADIAL 电容器 铝电解电容器

125℃ 引线型 铝电解电容器 GXE系列

封装/外壳：径向，Can 包装：卷带（TR） 描述：CAP ALUM 220UF 20% 80V RADIAL 电容器 铝电解电容器

125℃ 引线型 铝电解电容器 GXE系列

直插铝电解电容

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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