Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +29.0dBm TYPICAL OUTPUT POWER • 9.0dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 30mA PER BIN RANGE

8-12V low distortion GaAs power FET

Surface Mount TRANSZORB Transient Voltage Suppressors

FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Very fast r

1.3 Watts Axial Leaded Zener Diodes

VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

Rugged plastic case

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Fuse and Clip Assembly

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The 160 Series product is a metal fuse clip with pre-installed Littelfuse 443 Series Fuse

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