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ECH8价格
参考价格：￥1.4116
型号：ECH8102-TL-H 品牌：ON 备注：这里有ECH8多少钱，2025年最近7天走势，今日出价，今日竞价，ECH8批发/采购报价，ECH8行情走势销售排行榜，ECH8报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ECH8 | N-Channel IGBT Light-Controlling Flash Applications 文件：180.89 Kbytes Page：7 Pages | SANYO 三洋 |   | |
ECH8 | N-Channel IGBT Light-Controlling Flash Applications 文件：188.58 Kbytes Page：8 Pages | SANYO 三洋 | | |
ECH8 | N-Channel IGBT Light-Controlling Flash Applications | ONSEMI 安森美半导体 | | |
TRIODE-HEPTODE [RFT] TRIODE-HEPTODE | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications High-Current Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • High allowable power dissipation. • Halogen free compliance. Applications • High-power | SANYO 三洋 | | ||
PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications High-Current Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • High allowable power dissipation. • Halogen free compliance. • IECO is guaranteed for preventing reverse flow | SANYO 三洋 | | ||
Bipolar Transistor Bipolar Transistor –30V, –12A, Low VCE(sat), PNP Single ECH8 Features • Adoption of FBET, MBIT process • High current capacitance • Low collector-to-emitter saturation voltage • High speed switching • High allowable power dissipation • Halogen free compliance • IECO is guaranteed for p | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Bipolar Transistor –30V, –12A, Low VCE(sat), PNP Single ECH8 Features • Adoption of FBET, MBIT process • High current capacitance • Low collector-to-emitter saturation voltage • High speed switching • High allowable power dissipation • Halogen free compliance • IECO is guaranteed for p | ONSEMI 安森美半导体 | | ||
P-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. | SANYO 三洋 | | ||
ECH8304 General-Purpose Switching Device Applications Features • Best suited for load switching. • Low ON-resistance. • 1.8V drive. | SANYO 三洋 | | ||
General-Purpose Switching Device Features • Low ON-resistance. • 4V drive. | SANYO 三洋 | | ||
5 to 25 V, VOUT = 1.2 to 22 V, 2-channel DC-DC Controller IC with Step down regulation FEATURES 2-channel DC-DC Step Down Regulator Circuit that employs Voltage Mode Switching Control System Internal reference voltage is within 2 accuracy Input Voltage Range : VCC: 5 V ~ 25 V Adjustable Output Voltage Range with external Resistor : 1.2 V ~ 22 V (Note) Adjustable Sw | Panasonic 松下 | | ||
P-Channel Silicon MOSFET General-Purpose Switching Device Features • Low ON-resistance. • 4V drive. | SANYO 三洋 | | ||
P-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Best suited for load switching • Low ON-resistance • 1.8V drive • Halogen free compliance • Protection diode in | SANYO 三洋 | | ||
P-Channel Power MOSFET P-Channel Power MOSFET –12V, –10A, 12.5mΩ, Single ECH8 Features • Best suited for load switching • Low ON-resistance • 1.8V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
P-Channel Power MOSFET P-Channel Power MOSFET –12V, –10A, 12.5mΩ, Single ECH8 Features • Best suited for load switching • Low ON-resistance • 1.8V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
General-Purpose Switching Device Applications Features • 1.8V drive • Halogen free compliance • Protection diode in | SANYO 三洋 | | ||
P-Channel Power MOSFET Features • 1.8V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
P-Channel Power MOSFET Features • 1.8V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • 4V drive • Halogen free compliance • Protection diode in | SANYO 三洋 | | ||
P-Channel Power MOSFET Features • 4V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
P-Channel Power MOSFET Features • 4V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
General-Purpose Switching Device Applications P-Channel Silicon MOSFET Features • Low ON-resistance • 4V drive • Halogen free compliance • Protection diode in | SANYO 三洋 | | ||
Single P-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to low on resistance. This devices is suitable for applications with low on resistance requirements. Features • Low On-Resistance • 4V drive • ESD Diode-Protected Gate • Pb-Free, Halogen F | ONSEMI 安森美半导体 | | ||
Single P-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to low on resistance. This devices is suitable for applications with low on resistance requirements. Features • Low On-Resistance • 4V drive • ESD Diode-Protected Gate • Pb-Free, Halogen F | ONSEMI 安森美半导体 | | ||
Single P-Channel Power MOSFET This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to low on resistance. This devices is suitable for applications with low on resistance requirements. Features • Low On-Resistance • 4V drive • ESD Diode-Protected Gate • Pb-Free, Halogen F | ONSEMI 安森美半导体 | | ||
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance • 1.8V drive • Halogen free compliance • Protection diode in | SANYO 三洋 | | ||
P-Channel Power MOSFET Features • Low ON-resistance • 1.8V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
P-Channel Power MOSFET Features • Low ON-resistance • 1.8V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. | SANYO 三洋 | | ||
General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. | SANYO 三洋 | | ||
General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. | SANYO 三洋 | | ||
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. • Halogen free compliance. • Protection diode in | SANYO 三洋 | | ||
N-Channel Power MOSFET Features • Low ON-resistance. • 4V drive. • Halogen free compliance. • Protection diode in | ONSEMI 安森美半导体 | | ||
N-Channel Power MOSFET Features • Low ON-resistance. • 4V drive. • Halogen free compliance. • Protection diode in | ONSEMI 安森美半导体 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Ultrahigh-speed switching. • 1.8V drive. | SANYO 三洋 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=13mΩ (typ.) • 4V drive • Halogen free compliance • Protection diode in | SANYO 三洋 | | ||
N-Channel Power MOSFET Features • ON-resistance RDS(on)1=13mΩ (typ.) • 4V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
N-Channel Power MOSFET Features • ON-resistance RDS(on)1=13mΩ (typ.) • 4V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | | ||
General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=5.2mΩ (typ.) • 1.8V drive. • Halogen free compliance. • Protection diode in | SANYO 三洋 | | ||
N-Channel Power MOSFET Features • ON-resistance RDS(on)1=5.2mΩ (typ.) • 1.8V drive. • Halogen free compliance. • Protection diode in | ONSEMI 安森美半导体 | | ||
N-Channel Power MOSFET Features • ON-resistance RDS(on)1=5.2mΩ (typ.) • 1.8V drive. • Halogen free compliance. • Protection diode in | ONSEMI 安森美半导体 | | ||
PNP/NPN Epitaxial Planar Silicon Transistors Gate Drive Applications PNP/NPN Epitaxial Planar Silicon Transistors Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A PNP : VCE | SANYO 三洋 | | ||
Bipolar Transistor (-)30V, (-)30A, Low VCE(sat) Complementary Dual ECH8 Bipolar Transistor (–)30V, (–)30A, Low VCE(sat) Complementary Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (??30V, (??30A, Low VCE(sat) Complementary Dual ECH8 Bipolar Transistor (–)30V, (–)30A, Low VCE(sat) Complementary Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)30V, (-)30A, Low VCE(sat) Complementary Dual ECH8 Bipolar Transistor (–)30V, (–)30A, Low VCE(sat) Complementary Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A | ONSEMI 安森美半导体 | | ||
PNP/NPN Epitaxial Planar Silicon Transistors Gate Drive Applications PNP/NPN Epitaxial Planar Silicon Transistors Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.08V(typ.)@IC=2.5A PNP : VCE | SANYO 三洋 | | ||
Bipolar Transistor (-)50V, (-)30A, Low VCE(sat) Complementary Dual ECH8 Bipolar Transistor (–)50V, (–)30A, Low VCE(sat) Complementary Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.08V(typ.)@IC=2.5A | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)50V, (-)30A, Low VCE(sat) Complementary Dual ECH8 Bipolar Transistor (–)50V, (–)30A, Low VCE(sat) Complementary Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.08V(typ.)@IC=2.5A | ONSEMI 安森美半导体 | | ||
PNP Epitaxial Planar Silicon Transistor Motor Drive Applications PNP Epitaxial Planar Silicon Transistor Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Halogen free compliance | SANYO 三洋 | | ||
Bipolar Transistor -50V, -5A, Low VCE(sat) PNP Dual ECH8 Bipolar Transistor –50V, –5A, Low VCE(sat) PNP Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Halogen free compliance | ONSEMI 安森美半导体 | | ||
Bipolar Transistor -50V, -5A, Low VCE(sat) PNP Dual ECH8 Bipolar Transistor –50V, –5A, Low VCE(sat) PNP Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Halogen free compliance | ONSEMI 安森美半导体 | | ||
PNP Epitaxial Planar Silicon Transistor Motor Drive Applications PNP Epitaxial Planar Silicon Transistor Features • Composite type, facilitating high-density mounting. • Mounting height 0.9mm. • Halogen free compliance. | SANYO 三洋 | | ||
PNP Epitaxial Planar Silicon Transistor Motor Drive Applications PNP Epitaxial Planar Silicon Transistor Features • Composite type, facilitating high-density mounting. • Mounting height 0.9mm. • Halogen free compliance. | SANYO 三洋 | | ||
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance. • Suitable for lithim-ion battery use. • Drain common specification. • 2.5V drive. | SANYO 三洋 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • Low ON-resistance • 2.5V drive • Common-drain type • Protection diode in • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Halogen free compliance | SANYO 三洋 | | ||
N-Channel Silicon MOSFET General-Purpose Switching Device General-Purpose Switching Device Applications Features • Low ON-resistance. • Built-in gate protection resistor. • 2.5V drive. • Best suited for LiB charging and discharging Switch. • Common-drain type. | SANYO 三洋 | | ||
N-Channel Silicon MOSFET Features • 2.5V drive • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance • Protection diode in | SANYO 三洋 | | ||
N-Channel Power MOSFET Features • 2.5V drive • Common-drain type • Protection diode in • Best suited for LiB charging and discharging switch • Halogen free compliance | ONSEMI 安森美半导体 | | ||
N-Channel Power MOSFET Features • 2.5V drive • Common-drain type • Protection diode in • Best suited for LiB charging and discharging switch • Halogen free compliance | ONSEMI 安森美半导体 | |
ECH8产品属性
- 类型
描述
- 型号
ECH8
- 制造商
SANYO
- 制造商全称
Sanyo Semicon Device
- 功能描述
N-Channel IGBT Light-Controlling Flash Applications
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
25+ |
TSSOP-8 |
3000 |
原装正品,假一罚十! |
|||
ON(安森美) |
2511 |
9550 |
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价 |
||||
SANYO |
25+23+ |
New |
31736 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ON |
2430+ |
TSSOP8 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
SANYO |
24+ |
TSSOP-8 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
SANYO/三洋 |
23+ |
ECH8 |
15000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
SANYO/三洋 |
2025+ |
DFN8 |
4666 |
原装进口价格优 请找坤融电子! |
|||
ON |
23+ |
SOT23-8 |
70000 |
专注配单,只做原装进口现货 |
|||
ON |
最新 |
ECH-8 |
6800 |
全新原装公司现货低价 |
ECH8规格书下载地址
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2020-8-27
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