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位置：首页 > IC中文资料 > ECH8

ECH8价格

参考价格：￥1.4116

型号：ECH8102-TL-H 品牌：ON 备注：这里有ECH8多少钱，2026年最近7天走势，今日出价，今日竞价，ECH8批发/采购报价，ECH8行情走势销售排行榜，ECH8报价。
型号 功能描述 生产厂家 企业 LOGO 操作
ECH8

N-Channel IGBT Light-Controlling Flash Applications

文件：180.89 Kbytes Page：7 Pages

SANYO

三洋

ECH8

N-Channel IGBT Light-Controlling Flash Applications

文件：188.58 Kbytes Page：8 Pages

SANYO

三洋

ECH8

N-Channel IGBT Light-Controlling Flash Applications

ONSEMI

安森美半导体

ECH81

TRIODE-HEPTODE

[RFT] TRIODE-HEPTODE

ETCList of Unclassifed Manufacturers

未分类制造商

ECH8101

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • High allowable power dissipation. • Halogen free compliance. Applications • High-power

SANYO

三洋

ECH8102

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • High allowable power dissipation. • Halogen free compliance. • IECO is guaranteed for preventing reverse flow

SANYO

三洋

ECH8102

Bipolar Transistor

Bipolar Transistor –30V, –12A, Low VCE(sat), PNP Single ECH8 Features • Adoption of FBET, MBIT process • High current capacitance • Low collector-to-emitter saturation voltage • High speed switching • High allowable power dissipation • Halogen free compliance • IECO is guaranteed for p

ONSEMI

安森美半导体

ECH8102

双极晶体管，-30V -12A，低饱和压，PNP 单 ECH8

ECH8102 is Bipolar Transistor, -30V, -12A, Low VCE(sat), PNP Single ECH8 for High-Current Switching Applications. • Adoption of FBET, MBIT process\n• Low collector-to-emitter saturation voltage\n• High allowable power dissipation\n• High current capacitance\n• High speed switching\n• Halogen free compliance\n• IECO is guaranteed for preventing reverse fl ow from the collector to the emitter;

ONSEMI

安森美半导体

ECH8102-TL-H

Bipolar Transistor

Bipolar Transistor –30V, –12A, Low VCE(sat), PNP Single ECH8 Features • Adoption of FBET, MBIT process • High current capacitance • Low collector-to-emitter saturation voltage • High speed switching • High allowable power dissipation • Halogen free compliance • IECO is guaranteed for p

ONSEMI

安森美半导体

ECH8302

P-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive.

SANYO

三洋

ECH8304

ECH8304

General-Purpose Switching Device Applications Features • Best suited for load switching. • Low ON-resistance. • 1.8V drive.

SANYO

三洋

ECH8305

General-Purpose Switching Device

Features • Low ON-resistance. • 4V drive.

SANYO

三洋

ECH8305

5 to 25 V, VOUT = 1.2 to 22 V, 2-channel DC-DC Controller IC with Step down regulation

FEATURES  2-channel DC-DC Step Down Regulator Circuit that employs Voltage Mode Switching Control System  Internal reference voltage is within 2 accuracy  Input Voltage Range : VCC: 5 V ~ 25 V  Adjustable Output Voltage Range with external Resistor : 1.2 V ~ 22 V (Note)  Adjustable Sw

PANASONIC

松下

ECH8306

P-Channel Silicon MOSFET General-Purpose Switching Device

Features • Low ON-resistance. • 4V drive.

SANYO

三洋

ECH8308

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Best suited for load switching • Low ON-resistance • 1.8V drive • Halogen free compliance • Protection diode in

SANYO

三洋

ECH8308

P-Channel Power MOSFET

P-Channel Power MOSFET –12V, –10A, 12.5mΩ, Single ECH8 Features • Best suited for load switching • Low ON-resistance • 1.8V drive • Halogen free compliance • Protection diode in

ONSEMI

安森美半导体

ECH8308-TL-H

P-Channel Power MOSFET

P-Channel Power MOSFET –12V, –10A, 12.5mΩ, Single ECH8 Features • Best suited for load switching • Low ON-resistance • 1.8V drive • Halogen free compliance • Protection diode in

ONSEMI

安森美半导体

ECH8309

P-Channel Power MOSFET

Features • 1.8V drive • Halogen free compliance • Protection diode in

ONSEMI

安森美半导体

ECH8309

General-Purpose Switching Device Applications

Features • 1.8V drive • Halogen free compliance • Protection diode in

SANYO

三洋

ECH8309-TL-H

P-Channel Power MOSFET

Features • 1.8V drive • Halogen free compliance • Protection diode in

ONSEMI

安森美半导体

ECH8310

P-Channel Power MOSFET

Features • 4V drive • Halogen free compliance • Protection diode in

ONSEMI

安森美半导体

ECH8310

P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Features • 4V drive • Halogen free compliance • Protection diode in

SANYO

三洋

ECH8310-TL-H

P-Channel Power MOSFET

Features • 4V drive • Halogen free compliance • Protection diode in

ONSEMI

安森美半导体

ECH8315

Single P-Channel Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to low on resistance. This devices is suitable for applications with low on resistance requirements. Features • Low On-Resistance • 4V drive • ESD Diode-Protected Gate • Pb-Free, Halogen F

ONSEMI

安森美半导体

ECH8315

General-Purpose Switching Device Applications

P-Channel Silicon MOSFET Features • Low ON-resistance • 4V drive • Halogen free compliance • Protection diode in

SANYO

三洋

ECH8315-TL-H

Single P-Channel Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to low on resistance. This devices is suitable for applications with low on resistance requirements. Features • Low On-Resistance • 4V drive • ESD Diode-Protected Gate • Pb-Free, Halogen F

ONSEMI

安森美半导体

ECH8315-TL-W

Single P-Channel Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to low on resistance. This devices is suitable for applications with low on resistance requirements. Features • Low On-Resistance • 4V drive • ESD Diode-Protected Gate • Pb-Free, Halogen F

ONSEMI

安森美半导体

ECH8320

P-Channel Power MOSFET

Features • Low ON-resistance • 1.8V drive • Halogen free compliance • Protection diode in

ONSEMI

安森美半导体

ECH8320

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance • 1.8V drive • Halogen free compliance • Protection diode in

SANYO

三洋

ECH8320-TL-H

P-Channel Power MOSFET

Features • Low ON-resistance • 1.8V drive • Halogen free compliance • Protection diode in

ONSEMI

安森美半导体

ECH8401

N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive.

SANYO

三洋

ECH8402

General-Purpose Switching Device Applications

Features • Low ON-resistance. • 4V drive.

SANYO

三洋

ECH8402-TL-E

General-Purpose Switching Device Applications

Features • Low ON-resistance. • 4V drive.

SANYO

三洋

ECH8410

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance. • 4V drive. • Halogen free compliance. • Protection diode in

SANYO

三洋

ECH8410

N-Channel Power MOSFET

Features • Low ON-resistance. • 4V drive. • Halogen free compliance. • Protection diode in

ONSEMI

安森美半导体

ECH8410-TL-H

N-Channel Power MOSFET

Features • Low ON-resistance. • 4V drive. • Halogen free compliance. • Protection diode in

ONSEMI

安森美半导体

ECH8411

N-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • Ultrahigh-speed switching. • 1.8V drive.

SANYO

三洋

ECH8419

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Features • ON-resistance RDS(on)1=13mΩ (typ.) • 4V drive • Halogen free compliance • Protection diode in

SANYO

三洋

ECH8419

N-Channel Power MOSFET

Features • ON-resistance RDS(on)1=13mΩ (typ.) • 4V drive • Halogen free compliance • Protection diode in

ONSEMI

安森美半导体

ECH8419-TL-H

N-Channel Power MOSFET

Features • ON-resistance RDS(on)1=13mΩ (typ.) • 4V drive • Halogen free compliance • Protection diode in

ONSEMI

安森美半导体

ECH8420

N-Channel Power MOSFET

Features • ON-resistance RDS(on)1=5.2mΩ (typ.) • 1.8V drive. • Halogen free compliance. • Protection diode in

ONSEMI

安森美半导体

ECH8420

General-Purpose Switching Device Applications

Features • ON-resistance RDS(on)1=5.2mΩ (typ.) • 1.8V drive. • Halogen free compliance. • Protection diode in

SANYO

三洋

ECH8420-TL-H

N-Channel Power MOSFET

Features • ON-resistance RDS(on)1=5.2mΩ (typ.) • 1.8V drive. • Halogen free compliance. • Protection diode in

ONSEMI

安森美半导体

ECH8501

Bipolar Transistor (-)30V, (-)30A, Low VCE(sat) Complementary Dual ECH8

Bipolar Transistor (–)30V, (–)30A, Low VCE(sat) Complementary Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A

ONSEMI

安森美半导体

ECH8501

PNP/NPN Epitaxial Planar Silicon Transistors Gate Drive Applications

PNP/NPN Epitaxial Planar Silicon Transistors Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A PNP : VCE

SANYO

三洋

ECH8501-TL-H

Bipolar Transistor (-)30V, (-)30A, Low VCE(sat) Complementary Dual ECH8

Bipolar Transistor (–)30V, (–)30A, Low VCE(sat) Complementary Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A

ONSEMI

安森美半导体

ECH8501-TL-H

Bipolar Transistor (??30V, (??30A, Low VCE(sat) Complementary Dual ECH8

Bipolar Transistor (–)30V, (–)30A, Low VCE(sat) Complementary Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A

ONSEMI

安森美半导体

ECH8502

Bipolar Transistor (-)50V, (-)30A, Low VCE(sat) Complementary Dual ECH8

Bipolar Transistor (–)50V, (–)30A, Low VCE(sat) Complementary Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.08V(typ.)@IC=2.5A

ONSEMI

安森美半导体

ECH8502

PNP/NPN Epitaxial Planar Silicon Transistors Gate Drive Applications

PNP/NPN Epitaxial Planar Silicon Transistors Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.08V(typ.)@IC=2.5A PNP : VCE

SANYO

三洋

ECH8502-TL-H

Bipolar Transistor (-)50V, (-)30A, Low VCE(sat) Complementary Dual ECH8

Bipolar Transistor (–)50V, (–)30A, Low VCE(sat) Complementary Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.08V(typ.)@IC=2.5A

ONSEMI

安森美半导体

ECH8503

Bipolar Transistor -50V, -5A, Low VCE(sat) PNP Dual ECH8

Bipolar Transistor –50V, –5A, Low VCE(sat) PNP Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Halogen free compliance

ONSEMI

安森美半导体

ECH8503

PNP Epitaxial Planar Silicon Transistor Motor Drive Applications

PNP Epitaxial Planar Silicon Transistor Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Halogen free compliance

SANYO

三洋

ECH8503-TL-H

Bipolar Transistor -50V, -5A, Low VCE(sat) PNP Dual ECH8

Bipolar Transistor –50V, –5A, Low VCE(sat) PNP Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Halogen free compliance

ONSEMI

安森美半导体

ECH8504

PNP Epitaxial Planar Silicon Transistor Motor Drive Applications

PNP Epitaxial Planar Silicon Transistor Features • Composite type, facilitating high-density mounting. • Mounting height 0.9mm. • Halogen free compliance.

SANYO

三洋

ECH8505

PNP Epitaxial Planar Silicon Transistor Motor Drive Applications

PNP Epitaxial Planar Silicon Transistor Features • Composite type, facilitating high-density mounting. • Mounting height 0.9mm. • Halogen free compliance.

SANYO

三洋

ECH8601

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance. • Suitable for lithim-ion battery use. • Drain common specification. • 2.5V drive.

SANYO

三洋

ECH8601M

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-resistance • 2.5V drive • Common-drain type • Protection diode in • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Halogen free compliance

SANYO

三洋

ECH8601R

N-Channel Silicon MOSFET General-Purpose Switching Device

General-Purpose Switching Device Applications Features • Low ON-resistance. • Built-in gate protection resistor. • 2.5V drive. • Best suited for LiB charging and discharging Switch. • Common-drain type.

SANYO

三洋

ECH8602M

N-Channel Power MOSFET

Features • 2.5V drive • Common-drain type • Protection diode in • Best suited for LiB charging and discharging switch • Halogen free compliance

ONSEMI

安森美半导体

ECH8602M

N-Channel Silicon MOSFET

Features • 2.5V drive • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance • Protection diode in

SANYO

三洋

ECH8产品属性

  • 类型

    描述

  • Pb-free：

    Pb

  • Halide free：

    H

  • Status：

    Active

  • Polarity：

    PNP

  • Type：

    Low VCE(sat)

  • VCE(sat) Max (V)：

    0.135

  • IC Cont. (A)：

    12

  • VCEO Min (V)：

    30

  • VCBO (V)：

    30

  • VEBO (V)：

    6

  • VBE(sat) (V)：

    0.85

  • hFE Min：

    200

  • hFE Max：

    560

  • fT Min (MHz)：

    140

  • PTM Max (W)：

    1.6

  • Package Type：

    SOT-28 FL/ECH-8

ECH8供应商更多...

更新时间：2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
ECH8502-TL-H
onsemi(安森美)
24+
SOT-28FL
3022
原厂订货渠道,支持BOM配单一站式服务
询价
中天科工半导体（深圳）有限公司
ECH8622-TL-E
SANYO/三洋
25+
SSOP-8
32000
SANYO/三洋全新特价ECH8622-TL-E即刻询购立享优惠#长期有货
询价
深圳市豪迈兴电子有限公司
ECH8668-TL-H
ON(安森美)
24+
5553
只做原装现货假一罚十!价格最低!只卖原装现货
询价
深圳市科恒伟业电子有限公司
ECH8697R-TL-W
ON
2430+
TSSOP8
8540
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市华康联电子科技有限公司
ECH8697R-TL-W
ONSEMI
24+
N/A
10000
只做原装,实单最低价支持
询价
深圳市芯球通科技有限公司
ECH8502-TL-H
ON(安森美)
23+
SOT-28FL
11945
公司只做原装正品,假一赔十
询价
深圳市宇创芯科技有限公司
ECH8668-TL-H
ON(安森美)
24+
16860
原装正品现货支持实单
询价
千层芯半导体(深圳)有限公司
ECH8695R-TL-W
ON
24+
SOT-28
30000
ON一级代理商 原装进口现货
询价
深圳市明嘉莱科技有限公司
ECH8693R-TL-W
ONSEMI
25+
SMD
518000
明嘉莱只做原装正品现货
询价
深圳市得捷芯城科技有限公司
ECH8697R-TL-W
ON(安森美)
25+
SOT-28FL
18798
原装正品现货,原厂订货,可支持含税原型号开票。
询价

ECH8芯片相关品牌

ECH8规格书下载地址

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