PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • High allowable power dissipation. • Halogen free compliance. • IECO is guaranteed for preventing reverse flow

Bipolar Transistor

Bipolar Transistor –30V, –12A, Low VCE(sat), PNP Single ECH8 Features • Adoption of FBET, MBIT process • High current capacitance • Low collector-to-emitter saturation voltage • High speed switching • High allowable power dissipation • Halogen free compliance • IECO is guaranteed for p

双极晶体管，-30V -12A，低饱和压，PNP 单 ECH8

Bipolar Transistor

Bipolar Transistor –30V, –12A, Low VCE(sat), PNP Single ECH8 Features • Adoption of FBET, MBIT process • High current capacitance • Low collector-to-emitter saturation voltage • High speed switching • High allowable power dissipation • Halogen free compliance • IECO is guaranteed for p

封装/外壳：8-SMD，扁平引线 包装：散装 描述：TRANS PNP 30V 12A 8ECH 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

RS232/422 Low Cap, #24-2pr, FPO, O/A FoilBraid, PVC Jkt, CM, 100Ω

Product Description Computer EIA RS-232/422 Cable, 24 AWG stranded (7x32) tinned copper conductors, Datalene® insulation, twisted pairs, overall Beldfoil® (100 coverage) + tinned copper braid shield (65 coverage), 24 AWG stranded tinned copper drain wire, PVC jacket

T-1 Subminiature Lamps

T-1 Subminiature Lamps T-1 Subminiature Short Type Lamps

T1/CEPT ISDN PRI Transformers

文件：84.67 Kbytes Page：1 Pages

Low Capacitance for EIA RS-232 and EIA RS-422 Applications

文件：365.47 Kbytes Page：2 Pages

METAL CABLE CLAMPS

文件：279.99 Kbytes Page：1 Pages