PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • High allowable power dissipation. • Halogen free compliance. • IECO is guaranteed for preventing reverse flow

Bipolar Transistor

Bipolar Transistor –30V, –12A, Low VCE(sat), PNP Single ECH8 Features • Adoption of FBET, MBIT process • High current capacitance • Low collector-to-emitter saturation voltage • High speed switching • High allowable power dissipation • Halogen free compliance • IECO is guaranteed for p

双极晶体管，-30V -12A，低饱和压，PNP 单 ECH8

ECH8102 is Bipolar Transistor, -30V, -12A, Low VCE(sat), PNP Single ECH8 for High-Current Switching Applications. • Adoption of FBET, MBIT process\n• Low collector-to-emitter saturation voltage\n• High allowable power dissipation\n• High current capacitance\n• High speed switching\n• Halogen free compliance\n• IECO is guaranteed for preventing reverse fl ow from the collector to the emitter;

Bipolar Transistor

Bipolar Transistor –30V, –12A, Low VCE(sat), PNP Single ECH8 Features • Adoption of FBET, MBIT process • High current capacitance • Low collector-to-emitter saturation voltage • High speed switching • High allowable power dissipation • Halogen free compliance • IECO is guaranteed for p

封装/外壳：8-SMD，扁平引线 包装：散装 描述：TRANS PNP 30V 12A 8ECH 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

6-Pin DIP Optoisolators for Power Supply Applications(No Base Connection)

6-Pin DIP Optoisolators for Power Supply Applications(No Base Connection) The MOC8101, MOC8102, MOC8103, MOC8104 and MOC8105 devices consist of a gallium arsenide LED optically coupled to a silicon phototransistor in a dual–in–line package. • Closely Matched Current Transfer Ratio (CTR) Minimize

6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS (NO BASE CONNECTION)

6-PIN DIP OPTOCOUPLERS FOR POWER SUPPLY APPLICATIONS(NO BASE CONNECTION) FEATURES The MOC810X and CNY17F-X devices consist of a gallium arsenide LED optically coupled to a silicon phototransistor in a dual-in ine package. • Closely Matched Current Transfer Ratio (CTR) Minimizes Unit-to-Unit Var

SUPER BRIGHT T-1쩐 (5mm) LED LAMPS

DESCRIPTION These T-1¾ super bright LEDs have a narrow 20° viewing angle for concentrated light output. FEATURES ■ Outstanding meterial efficiency ■ Popular T-1¾ package ■ Low drive current ■ Solid state reliability ■ Super high brightness suitable for outdoors applications ■ Standard 1 mi

RF AMPLIFIER IC FOR 150 MHz TO 330 MHz PAGER SYSTEM

DESCRIPTION µPC8102T is a silicon monolisic integrated circuit designed as RF amplifier for 150 MHz to 330 MHz pager system. Due to 1 V supply voltage, this IC is suitable for low voltage pager system. The package is a 6 pin mini mold suitable for high-density surface mounting. This IC is manufa

RF AMPLIFIER IC FOR 150 MHz TO 330 MHz PAGER SYSTEM

DESCRIPTION µPC8102T is a silicon monolisic integrated circuit designed as RF amplifier for 150 MHz to 330 MHz pager system. Due to 1 V supply voltage, this IC is suitable for low voltage pager system. The package is a 6 pin mini mold suitable for high-density surface mounting. This IC is manufa