TRIODE-HEPTODE

[RFT] TRIODE-HEPTODE

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • High allowable power dissipation. • Halogen free compliance. Applications • High-power

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-Current Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High speed switching. • High allowable power dissipation. • Halogen free compliance. • IECO is guaranteed for preventing reverse flow

Bipolar Transistor

Bipolar Transistor –30V, –12A, Low VCE(sat), PNP Single ECH8 Features • Adoption of FBET, MBIT process • High current capacitance • Low collector-to-emitter saturation voltage • High speed switching • High allowable power dissipation • Halogen free compliance • IECO is guaranteed for p

Bipolar Transistor

Bipolar Transistor –30V, –12A, Low VCE(sat), PNP Single ECH8 Features • Adoption of FBET, MBIT process • High current capacitance • Low collector-to-emitter saturation voltage • High speed switching • High allowable power dissipation • Halogen free compliance • IECO is guaranteed for p

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

双极晶体管，-30V -12A，低饱和压，PNP 单 ECH8

封装/外壳：8-SMD，扁平引线 包装：散装 描述：TRANS PNP 30V 12A 8ECH 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个