Bipolar Transistor

–30V, –12A, Low VCE(sat), PNP Single ECH8

Features

• Adoption of FBET, MBIT process

• High current capacitance

• Low collector-to-emitter saturation voltage

• High speed switching

• High allowable power dissipation

• Halogen free compliance

• IECO is guaranteed for preventing reverse flow from the collector to the emitter

Applications

• High-power IGBT / MOSFET gate drivers, DC / DC converters, lamp drivers, motor drivers