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ECH8501价格

参考价格:¥2.0083

型号:ECH8501-TL-H 品牌:ON 备注:这里有ECH8501多少钱,2026年最近7天走势,今日出价,今日竞价,ECH8501批发/采购报价,ECH8501行情走势销售排行榜,ECH8501报价。
型号 功能描述 生产厂家 企业 LOGO 操作
ECH8501

PNP/NPN Epitaxial Planar Silicon Transistors Gate Drive Applications

PNP/NPN Epitaxial Planar Silicon Transistors Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A PNP : VCE

SANYO

三洋

ECH8501

Bipolar Transistor (-)30V, (-)30A, Low VCE(sat) Complementary Dual ECH8

Bipolar Transistor (–)30V, (–)30A, Low VCE(sat) Complementary Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A

ONSEMI

安森美半导体

Bipolar Transistor (-)30V, (-)30A, Low VCE(sat) Complementary Dual ECH8

Bipolar Transistor (–)30V, (–)30A, Low VCE(sat) Complementary Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A

ONSEMI

安森美半导体

Bipolar Transistor (??30V, (??30A, Low VCE(sat) Complementary Dual ECH8

Bipolar Transistor (–)30V, (–)30A, Low VCE(sat) Complementary Dual ECH8 Features • Composite type, facilitating high-density mounting • Mounting height 0.9mm • Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A

ONSEMI

安森美半导体

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

NEC

瑞萨

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

NEC

瑞萨

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

NEC

瑞萨

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

NEC

瑞萨

1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE

DESCRIPTION The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber. The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation over wide temperature range of 0 to +65 °C. It is designed

NEC

瑞萨

ECH8501产品属性

  • 类型

    描述

  • 型号

    ECH8501

  • 制造商

    SANYO

  • 制造商全称

    Sanyo Semicon Device

  • 功能描述

    PNP/NPN Epitaxial Planar Silicon Transistors Gate Drive Applications

更新时间:2026-5-17 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
SOT-28FL
3022
原厂订货渠道,支持BOM配单一站式服务
ONSEMI
25+
N/A
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
ON/安森美
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
ON/安森美
2026+
TSOP-8
3000
原装正品 假一罚十!
ON/安森美
21+
NA
12820
只做原装,质量保证
三年内
1983
只做原装正品
ON(安森美)
2447
SOT-28 FL
315000
一级代理专营品牌!原装正品,优势现货,长期排单到货
ON/安森美
23+
SMD
7000
ON
22+
SSOP8
20000
公司只有原装 品质保证
ON(安森美)
25+
SOT-28FL
500000
源自原厂成本,高价回收工厂呆滞

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