ec12编码器

EC160M系列编码器一般主要用于：音响设备、汽车电子、家用电器、仪器仪表、医疗器械等领域。请注意编码器避免储藏与高温、潮湿及腐蚀的场所，拆包装后未使用完的剩余产品需要储存于防潮的环境下保存。 使用温度范围:-10℃ to+70℃\n保存温度范围: -40℃ to+85℃\n额定电压：:DC 5V\n全回转角度：360度(无止档点)\n回转寿命：30000+200 Cycles\n接触电阻：≤100mΩ\n绝缘阻抗：100MΩ 以上\n振荡：≤10mS 按压;

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

POWER TRANSISTORS(10A,320-380V,125W)