丝印代码：E166；6 and 8-Channel Low Capacitance ESD Arrays

Product Description The CM1216 family of diode arrays provide sESD protection for electronic components or sub−systems requiring minimal capacitive loading. These devices are ideal for protecting systems with high data and clock rates or for circuits requiring low capacitive loading. Each ESD cha

丝印代码：E166；6 and 8-Channel Low Capacitance ESD Arrays

Product Description The CM1216 family of diode arrays provide sESD protection for electronic components or sub−systems requiring minimal capacitive loading. These devices are ideal for protecting systems with high data and clock rates or for circuits requiring low capacitive loading. Each ESD cha

丝印代码：E166；6 and 8-Channel Low Capacitance ESD Arrays

文件：149.42 Kbytes Page：7 Pages

丝印代码：E166；6 and 8-Channel Low Capacitance ESD Arrays

文件：149.42 Kbytes Page：7 Pages

Engineering Catalog 169

Miniature LEDs (2.0mm Diameter) T-1 LEDs (Very Bright) T-1 LEDs with Resistor - 5V T-1 Low Current LEDs (2mA) T-1 Bi-Color LEDs (Two Leads) T-1 Bi-Color LEDs (Three Leads) Mini LEDs T-1 Flat Top LEDs T-1, Right Angle LEDs (3mm) T-1¾ LEDs (Very Bright) T-1 and T-1¾ ,Ultra Bright, Red GaAl

双4输入或/或非门（高阻）

SAFETY TRANSFORMERS

文件：114.16 Kbytes Page：1 Pages

SAFETY TRANSFORMERS

文件：114.16 Kbytes Page：1 Pages

SAFETY TRANSFORMERS

文件：114.16 Kbytes Page：1 Pages

SAFETY TRANSFORMERS

文件：114.16 Kbytes Page：1 Pages

SAFETY TRANSFORMERS

文件：114.16 Kbytes Page：1 Pages

SAFETY TRANSFORMERS

文件：114.16 Kbytes Page：1 Pages

Silicon MOS IC

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

MOSFET BROADBAND RF POWER FETs

20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily for wideband large–signal output and driver from 30– 500MHz. • Low Crss— 4.5 pF @ VDS= 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55 • Option

TMOS BROADBAND RF POWER FET

40 W, 500 MHz TMOS BROADBAND RF POWER FET Designed primarily for wideband large–signal output and driver stages to 500 MHz. • Push–Pull Configuration Reduces Even Numbered Harmonics • Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts Gain = 13 dB Efficie

Single Phase Bridge Rectifier 2.0 Amp

Features: • Ideal for Printed Circuit Board • Surge Overload Rating: 50A (Peak)