位置：首页 > IC中文资料第5720页 > E13003T
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
POWER TRANSISTOR SWITCHING REGULATOR APPLICATION • High speed switching • Suitable for switching regulator and motor control • Case : TO-126 molded plastic body | DAESAN |   | ||
POWER TRANSISTOR SWITCHING REGULATOR APPLICATION • High speed switching • Suitable for switching regulator and motor control • Case : TO-220 molded plastic body | DAESAN | | ||
POWER TRANSISTOR SWITCHING REGULATOR APPLICATION • High speed switching • Suitable for switching regulator and motor control • Case : TO-92 molded plastic body | DAESAN | | ||
POWER TRANSISTOR | DAESAN | | ||
POWER TRANSISTOR | DAESAN | | ||
POWER TRANSISTOR | DAESAN | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | |
E13003T产品属性
- 类型
描述
- 型号
E13003T
- 制造商
DAESAN
- 制造商全称
Daesan Electronics Corp.
- 功能描述
POWER TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FCS |
23+ |
NA |
763 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
|||
原装正品 |
23+ |
TO-220 |
34857 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
FSC |
25+ |
TO-220 |
9500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
FSC |
2023+ |
TO-220 |
5800 |
进口原装,现货热卖 |
|||
FAIRCHILD |
24+ |
TO-126 |
65200 |
一级代理/放心采购 |
|||
E13002 |
23+ |
TO-92 |
3000 |
原装正品假一罚百!可开增票! |
|||
FA |
24+ |
8985 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
E13002 |
22+ |
TO-92 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
HGF |
2026+ |
TO-92 |
50000 |
原装正品 假一罚十! |
|||
FSC |
23+ |
TO-220 |
5000 |
E13003T规格书下载地址
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2013-3-5
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