| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 |   | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
12+ |
15000 |
全新原装,绝对正品,公司现货供应。 |
||||
26+ |
N/A |
62000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
恩XP |
25+ |
TO-2 |
90000 |
全新原装现货 |
|||
恩XP |
25+ |
SOT54 |
188600 |
全新原厂原装正品现货 欢迎咨询 |
|||
ADI |
23+ |
NA |
7000 |
||||
恩XP |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
LINKCOM |
23+ |
5W |
89630 |
当天发货全新原装现货 |
|||
恩XP |
2023+ |
TO-2 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
恩XP |
23+ |
TO92 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
恩XP |
24+ |
TO92 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
E13003BT规格书下载地址
E13003BT参数引脚图相关
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E13003BT数据表相关新闻
E220-400M22S 是亿佰特（EBYTE）推出的一款工作于400MHz 频段的 LoRa 无线通信模块，基于 Semtech LoRa 技术设计，聚焦远距离传输、低功耗、强抗干扰特性，适用于工业物联网、智能农业、智慧城市等场景。
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E22-400T30S 是亿佰特（EBYTE） 800000PCS
2025-11-4E101SD1CBE
E101SD1CBE
2021-11-16E104-035R
E104-035R ，全新原装当天发货或门市自取0755-82732291.
2019-11-26E07040K0A全新原装现货
可立即发货
2019-9-24E211ATF-缓冲器/驱动器...
描述 该Edge211是一个双三元司机在制造 电压CMOS全过程。它是专为自动 测试设备和仪器在成本，功能 密度和电源都处于溢价。 每个tristatable驱动程序是能够产生3个级别- 一为逻辑高，为逻辑低之一，对于任何一 终止电压或特殊的编程电压。 该Edge211的目的是提供一个极低的泄漏， 低成本，低功耗，小封装，驱动解决方案 100兆赫及以下针电子应用。 特点 •100 MHz运行 •12V的
2013-3-5
DdatasheetPDF页码索引
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