DXT13003DG价格
参考价格：￥0.9459
型号：DXT13003DG-13 品牌：Diodes Incorporated 备注：这里有DXT13003DG多少钱，2026年最近7天走势，今日出价，今日竞价，DXT13003DG批发/采购报价，DXT13003DG行情走势销售排行榜，DXT13003DG报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DXT13003DG | 450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features BVCEO > 450V BVCES > 700V BVEBO > 9V IC = 1.5A high Continuous Collector Current Integrated Collector-Emitter Diode to act as free-wheeling diode Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) | DIODES 美台半导体 |   | |
DXT13003DG | NPN, 700V, 1.3A, SOT223 | DIODES 美台半导体 | | |
丝印代码：13003D；450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 Features BVCEO > 450V BVCES > 700V BVEBO > 9V IC = 1.5A high Continuous Collector Current Integrated Collector-Emitter Diode to act as free-wheeling diode Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) | DIODES 美台半导体 | | ||
450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223 文件：377.68 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR） 描述：TRANS NPN 450V 1.3A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | DIODES 美台半导体 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
Silicon Diffused Power Transistor GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. | PHILIPS 飞利浦 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Features ■ High volt | STMICROELECTRONICS 意法半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES INCORPORATED |
25+ |
N/A |
6843 |
样件支持,可原厂排单订货! |
|||
DIODES INCORPORATED |
25+ |
N/A |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
SYFOREVER |
25+ |
SOT223 |
20300 |
SYFOREVER原装特价DXT13003DG-13即刻询购立享优惠#长期有货 |
|||
DIODES |
20+/19+ |
SOT223 |
185 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DIODES/美台 |
23+ |
SOT-223 |
12700 |
买原装认准中赛美 |
|||
DIODES/美台 |
23+ |
SOT223 |
6000 |
原装正品假一罚百!可开增票! |
|||
DIODES/美台 |
21+ |
NA |
5000 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
Diodes(美台) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
DiodesZetex |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
DIODES/美台 |
2450+ |
SOT-223 |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
DXT13003DG规格书下载地址
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DdatasheetPDF页码索引
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