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DS125价格
参考价格：￥424.7756
型号：DS1250AB-100+ 品牌：Maxim 备注：这里有DS125多少钱，2025年最近7天走势，今日出价，今日竞价，DS125批发/采购报价，DS125行情走势销售排行榜，DS125报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DS125 | Homogeneity and reliability 文件：1.27385 Mbytes Page：15 Pages | LUMILEDS |   | |
4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such | Dallas | | ||
4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such | Dallas | | ||
4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such | Dallas | | ||
4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such | Dallas | | ||
4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such | Dallas | | ||
4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit | Dallas | | ||
4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit | Dallas | | ||
4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit | Dallas | | ||
4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit | Dallas | | ||
4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit | Dallas | | ||
3.3V 4096k Nonvolatile SRAM FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 150 ns | Dallas | | ||
3.3V 4096k Nonvolatile SRAM FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 150 ns | Dallas | | ||
3.3V 4096k Nonvolatile SRAM FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access times as fast as 150 ns | Dallas | | ||
4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such | Dallas | | ||
4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such | Dallas | | ||
4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such | Dallas | | ||
4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit | Dallas | | ||
4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit | Dallas | | ||
4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit | Dallas | | ||
4096K Nonvolatile SRAM DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit | Dallas | | ||
4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such | Dallas | | ||
4096k Nonvolatile SRAM DESCRIPTION The DS1250 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such | Dallas | | ||
4096k NV SRAM with Phantom Clock DESCRIPTION The DS1251 4096K NV SRAM with Phantom Clock is a fully static nonvolatile RAM (organized as 512K words by 8 bits) with a built–in real time clock. The DS1251Y has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance conditi | Dallas | | ||
4096K NV SRAM with Phantom Clock DESCRIPTION The DS1251 4096K NV SRAM with Phantom Clock is a fully static nonvolatile RAM (organized as 512K words by 8 bits) with a built-in real-time clock. The DS1251Y has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condit | Maxim 美信 | | ||
4096K NV SRAM with Phantom Clock DESCRIPTION The DS1251 4096K NV SRAM with Phantom Clock is a fully static nonvolatile RAM (organized as 512K words by 8 bits) with a built-in real-time clock. The DS1251Y has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condit | Maxim 美信 | | ||
4096k NV SRAM with Phantom Clock DESCRIPTION The DS1251 4096K NV SRAM with Phantom Clock is a fully static nonvolatile RAM (organized as 512K words by 8 bits) with a built–in real time clock. The DS1251Y has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance conditi | Dallas | | ||
4096K NV SRAM with Phantom Clock DESCRIPTION The DS1251 4096K NV SRAM with Phantom Clock is a fully static nonvolatile RAM (organized as 512K words by 8 bits) with a built-in real-time clock. The DS1251Y has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condit | Maxim 美信 | | ||
4096K NV SRAM with Phantom Clock DESCRIPTION The DS1251 4096K NV SRAM with Phantom Clock is a fully static nonvolatile RAM (organized as 512K words by 8 bits) with a built-in real-time clock. The DS1251Y has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condit | Maxim 美信 | | ||
4096k NV SRAM with Phantom Clock DESCRIPTION The DS1251 4096K NV SRAM with Phantom Clock is a fully static nonvolatile RAM (organized as 512K words by 8 bits) with a built–in real time clock. The DS1251Y has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance conditi | Dallas | | ||
4096K NV SRAM with Phantom Clock DESCRIPTION The DS1251 4096K NV SRAM with Phantom Clock is a fully static nonvolatile RAM (organized as 512K words by 8 bits) with a built-in real-time clock. The DS1251Y has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condit | Maxim 美信 | | ||
4096K NV SRAM with Phantom Clock DESCRIPTION The DS1251 4096K NV SRAM with Phantom Clock is a fully static nonvolatile RAM (organized as 512K words by 8 bits) with a built-in real-time clock. The DS1251Y has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condit | Maxim 美信 | | ||
4096K NV SRAM with Phantom Clock DESCRIPTION The DS1251Y 4096K NV SRAM with Phantom Clock is a fully static nonvolatile RAM (organized as 512K words by 8 bits) with a built–in real time clock. The DS1251Y has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance cond | Dallas | | ||
4096K NV SRAM with Phantom Clock DESCRIPTION The DS1251Y 4096K NV SRAM with Phantom Clock is a fully static nonvolatile RAM (organized as 512K words by 8 bits) with a built–in real time clock. The DS1251Y has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance cond | Dallas | | ||
4096K NV SRAM with Phantom Clock DESCRIPTION The DS1251Y 4096K NV SRAM with Phantom Clock is a fully static nonvolatile RAM (organized as 512K words by 8 bits) with a built–in real time clock. The DS1251Y has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance cond | Dallas | | ||
4096K NV SRAM with Phantom Clock DESCRIPTION The DS1251 4096K NV SRAM with Phantom Clock is a fully static nonvolatile RAM (organized as 512K words by 8 bits) with a built-in real-time clock. The DS1251Y has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condit | Maxim 美信 | | ||
4096K NV SRAM with Phantom Clock DESCRIPTION The DS1251 4096K NV SRAM with Phantom Clock is a fully static nonvolatile RAM (organized as 512K words by 8 bits) with a built-in real-time clock. The DS1251Y has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condit | Maxim 美信 | | ||
4096k NV SRAM with Phantom Clock DESCRIPTION The DS1251 4096K NV SRAM with Phantom Clock is a fully static nonvolatile RAM (organized as 512K words by 8 bits) with a built–in real time clock. The DS1251Y has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance conditi | Dallas | | ||
PowerCap with Crystal GENERAL DESCRIPTION The DS9034PCX PowerCap is designed to be a lithium power source for nonvolatile timekeeping RAMs in Dallas Semiconductor’s directly surface-mountable PowerCap Module (PCM) package. After a PowerCap module board has been soldered in place and cleaned, the DS9034PCX PowerCap is | Maxim 美信 | | ||
4096K NV SRAM with Phantom Clock DESCRIPTION The DS1251 4096K NV SRAM with Phantom Clock is a fully static nonvolatile RAM (organized as 512K words by 8 bits) with a built-in real-time clock. The DS1251Y has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condit | Maxim 美信 | | ||
4096K NV SRAM with Phantom Clock DESCRIPTION The DS1251 4096K NV SRAM with Phantom Clock is a fully static nonvolatile RAM (organized as 512K words by 8 bits) with a built-in real-time clock. The DS1251Y has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condit | Maxim 美信 | | ||
PowerCap with Crystal GENERAL DESCRIPTION The DS9034PCX PowerCap is designed to be a lithium power source for nonvolatile timekeeping RAMs in Dallas Semiconductor’s directly surface-mountable PowerCap Module (PCM) package. After a PowerCap module board has been soldered in place and cleaned, the DS9034PCX PowerCap is | Maxim 美信 | | ||
2M x 8 NV SRAM with Phantom Clock GENERAL DESCRIPTION The DS1254 is a fully nonvolatile static RAM (NV SRAM) (organized as 2M words by 8 bits) with built-in real-time clock. It has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-oftolerance condition. When such a condition occu | Maxim 美信 | | ||
2M x 8 NV SRAM with Phantom Clock DESCRIPTION The DS1254 is a fully nonvolatile static RAM (NV SRAM) (organized as 2M words by 8 bits) with builtin real-time clock. It has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the | Dallas | | ||
2M x 8 NV SRAM with Phantom Clock DESCRIPTION The DS1254 is a fully nonvolatile static RAM (NV SRAM) (organized as 2M words by 8 bits) with builtin real-time clock. It has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the | Dallas | | ||
2M x 8 NV SRAM with Phantom Clock GENERAL DESCRIPTION The DS1254 is a fully nonvolatile static RAM (NV SRAM) (organized as 2M words by 8 bits) with built-in real-time clock. It has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-oftolerance condition. When such a condition occu | Maxim 美信 | | ||
2M x 8 NV SRAM with Phantom Clock GENERAL DESCRIPTION The DS1254 is a fully nonvolatile static RAM (NV SRAM) (organized as 2M words by 8 bits) with built-in real-time clock. It has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-oftolerance condition. When such a condition occu | Maxim 美信 | | ||
2M x 8 NV SRAM with Phantom Clock DESCRIPTION The DS1254 is a fully nonvolatile static RAM (NV SRAM) (organized as 2M words by 8 bits) with builtin real-time clock. It has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the | Dallas | | ||
2M x 8 NV SRAM with Phantom Clock DESCRIPTION The DS1254 is a fully nonvolatile static RAM (NV SRAM) (organized as 2M words by 8 bits) with builtin real-time clock. It has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the | Dallas | | ||
2M x 8 NV SRAM with Phantom Clock DESCRIPTION The DS1254 is a fully nonvolatile static RAM (NV SRAM) (organized as 2M words by 8 bits) with builtin real-time clock. It has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the | Dallas | | ||
128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi | Dallas | | ||
128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi | Dallas | | ||
128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi | Dallas | | ||
128k x 16 Nonvolatile SRAM DESCRIPTION The DS1258 128k x 16 nonvolatile (NV) SRAMs are 2,097,152-bit fully static, NV SRAMs, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCCfor an out-of-tolerance condition. When such a condi | Dallas | | ||
3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W | Dallas | | ||
3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W | Dallas | | ||
3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W | Dallas | | ||
3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W | Dallas | | ||
3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W | Dallas | | ||
3.3V 128k x 16 Nonvolatile DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM, organized as 131,072 words by 16 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. W | Dallas | |
DS125产品属性
- 类型
描述
- 型号
DS125
- 制造商
Maxim Integrated Products
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Maxim(美信) |
24+ |
标准封装 |
17048 |
原厂渠道供应,大量现货,原型号开票。 |
|||
TXAS |
2016+ |
QFN |
3750 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
DALLAS原装正品专卖价 |
NEW |
DIP |
16567 |
全新原装正品,价格优势,长期供应,量大可订 |
|||
TI/德州仪器 |
22+ |
WQFN-54 |
500000 |
原装现货支持实单价优/含税 |
|||
DALLAS |
2430+ |
DIP32 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
TI/德州仪器 |
20+ |
明嘉莱只做原装正品现货 |
2510000 |
WQFN-54 |
|||
TI(德州仪器) |
24+ |
N/A |
8048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
TI/德州仪器 |
22+ |
WQFN24 |
8000 |
原装正品现货假一罚十 |
|||
TI/德州仪器 |
2025+ |
QFN54 |
3000 |
原装进口价格优 请找坤融电子! |
|||
TI |
19+ |
QFN48 |
8500 |
DS125规格书下载地址
DS125参数引脚图相关
- f338
- F330
- f133
- f1212
- ex128
- et600
- ESD
- ep9315
- ep1c3t144c8n
- EMI滤波器
- em35
- EDA
- e251
- d类功放
- d触发器芯片
- d触发器
- dsp芯片
- dsp技术
- ds18b20
- ds1302
- DS1284
- DS1283
- DS1270Y
- DS1270W
- DS127
- DS126C2
- DS1267
- DS1265Y
- DS1265W
- DS1260
- DS126
- DS125BR401ANJYT
- DS125BR401AEVM
- DS1259
- DS1258Y
- DS1258W
- DS1254
- DS1251YP-70IND+
- DS1251Y-70+
- DS1251Y
- DS1251WP-120+
- DS1251W-120IND+
- DS1251W-120+
- DS1251P
- DS1251
- DS1250YP-70+
- DS1250Y-70IND+
- DS1250Y-70+
- DS1250Y-100IND+
- DS1250Y-100+
- DS1250Y
- DS1250WP-100+
- DS1250W-100IND+
- DS1250W
- DS1250AB-70IND+
- DS1250AB-70+
- DS1250AB-100+
- DS1-25-0003
- DS1-25-0002
- DS1-25-0001
- DS1249Y
- DS1249W
- DS1248YP-70+
- DS1248Y-70IND+
- DS1248Y-70+
- DS1248WP-120IND+
- DS1248WP-120+
- DS1248W-120IND+
- DS1248W-120+
- DS1248P
- DS1248
- DS1245YP-70IND+
- DS1245YP-70+
- DS1245YP-100+
- DS1245Y-85+
- DS1245Y-70IND+
- DS1245Y-70+
- DS1245Y-120IND+
- DS1245Y-120+
- DS1245Y-100+
- DS1245Y
- DS1245WP-150+
- DS1245WP-100+
- DS1245W-150+
- DS1245W-100IND+
- DS1245W
- DS1245
- DS1244Y
- DS1244P
- DS1244
- DS1243Y
- DS1243
- DS1239
- DS1238S
- DS1238A
- DS1238
- DS1236A
- DS1236
- DS1235Y
- DS1233M
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2020-10-28DS1259-电池管理芯片
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2013-1-1DS1267-双数字电位器芯片
DS1267双数字电位器芯片由两个数字控制，固态电位器。每个电位器是由256个电阻部分。彼此之间的电阻节和电位器两端的雨刮器都可以访问的抽头点。中的地位电阻阵列上的雨刮器是由一个8位值控制抽头点连接到雨刮器输出。通过3线串行接口完成通信和控制设备。这个接口允许读取或写入设备抽头位置。（或堆叠）系列中增加的总电阻与两个电位器，可连接相同的分辨率。对于多个设备，单处理器的环境中，DS1267可级联或菊花链式。此功能提供一个单一的3线总线控制多台设备的。DS1267是提供了三个标准电阻值，其中包括10，50和100千欧版本。 该设备可用的软件包，包括一个14引脚DIP，16引脚SOIC，和20引脚T
2012-12-11
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