4096K Nonvolatile SRAM

DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit

4096K Nonvolatile SRAM

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4096K Nonvolatile SRAM

4096K Nonvolatile SRAM

DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit

4096K Nonvolatile SRAM

DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit

4096K Nonvolatile SRAM

DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit

4096K Nonvolatile SRAM

DESCRIPTION The DS1250 4096K Nonvolatile SRAMs are 4,194,304–bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each NV SRAM has a self–contained lithium energy source and control circuitry which constantly monitors VCC for an out–of–tolerance condition. When such a condit

封装/外壳：34-LPM 包装：管件 描述：IC NVSRAM 4MBIT PARALLEL 34LPM 集成电路（IC） 存储器

封装/外壳：34-LPM 包装：管件 描述：IC NVSRAM 4MBIT PARALLEL 34LPM 集成电路（IC） 存储器

10 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.80 VOLTS 150 WATTS

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Very low noise figure ● High transition frequency fT = 12 GHz ● Excellent large signal behaviour Applications     For low noise applicatins such as power amplifiers, mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to mi

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Very low noise figure ● High transition frequency fT = 12 GHz ● Excellent large signal behaviour Applications     For low noise applicatins such as power amplifiers, mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to mi

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Very low noise figure ● High transition frequency fT = 12 GHz ● Excellent large signal behaviour Applications     For low noise applicatins such as power amplifiers, mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to mi

Silicon NPN Planar RF Transistor

Features ● Low power applications ● Very low noise figure ● High transition frequency fT = 12 GHz ● Excellent large signal behaviour Applications     For low noise applicatins such as power amplifiers, mixers and oscillators in analogue and digital TV–systems (e.g. satellite tuners) up to mi