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型号 功能描述 生产厂家 企业 LOGO 操作

115V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  DC-DC Primary Switch  Load Switch Features and Benefits 

DIODES

美台半导体

115V N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.\n\n •0.6mm Profile – Ideal for Low Profile Applications\n•Low On-Resistance\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n•Halogen and Antimony Free. “Green” Device (Note 3)\n;

DIODES

美台半导体

115V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  DC-DC Primary Switch  Load Switch Features and Benefits 

DIODES

美台半导体

115V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  DC-DC Primary Switch  Load Switch Features and Benefits 

DIODES

美台半导体

115V N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. •0.4mm Profile—Ideal for Low Profile Applications\n•100% Unclamped Inductive Switching (UIS) Test in Production—Ensures More Reliable and Robust End Application\n•Halogen and Antimony Free. “Green” Device (Note 3);

DIODES

美台半导体

650V N-Channel Power MOSFET

Features RDS(ON)

SY

顺烨电子

650V N-Channel Power MOSFET

Features RDS(ON)

SHUNYE

顺烨电子

包装:卷带(TR) 描述:MOSFET BVDSS: 101V~250V POWERDI5 分立半导体产品 晶体管 - FET,MOSFET - 单个

DIODES

美台半导体

包装:卷带(TR) 描述:MOSFET BVDSS: 101V~250V POWERDI5 分立半导体产品 晶体管 - FET,MOSFET - 单个

DIODES

美台半导体

高压MOSFET

XINNUO

DMT12产品属性

  • 类型

    描述

  • Automotive Compliant PPAP:

    No

  • Polarity:

    N

  • ESD Diodes:

    No

  • VDS:

    115 V

  • VGS:

    20 ±V

  • IDS @ TA = +25°C:

    4.3 A

  • PD @ TA = +25°C:

    1.8 W

  • RDS(ON) Max @ VGS (10V):

    65 mΩ

  • RDS(ON) Max @ VGS (4.5V):

    70 mΩ

  • RDS(ON) Max @ VGS (2.5V):

    N/A mΩ

  • RDS(ON) Max @ VGS (1.8V):

    N/A mΩ

  • VGS (th) Max:

    2.2 V

  • QG Typ @ VGS = 4.5V (nC):

    N/A nC

  • QG Typ @ VGS = 10V (nC):

    5.5 nC

  • Packages:

    U-DFN2020-6

更新时间:2026-8-1 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODEZTX
25+
N/A
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
DIODEZTX
25+
N/A
6843
样件支持,可原厂排单订货!
DIODES/美台
24+
N/A
500000
美台原厂超低价支持
DIODES/美台
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
Diodes(美台)
26+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
DIODES/美台
26+
V-DFN3333-8
25000
原装正品公司现货,假一赔十!
DIODES/美台
23+
POWERDI3333-8
50000
全新原装正品现货,支持订货
DIODES/美台
21+
V-DFN3333-8
8080
只做原装,质量保证
DT Magnetics
25+
60
公司优势库存 热卖中!!
DIODES
22+
POWERDI333
833
全新 发货1-2天

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