| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DMT12H065LFDF | 115V N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications DC-DC Primary Switch Load Switch Features and Benefits | DIODES 美台半导体 |   | |
DMT12H065LFDF | 115V N-CHANNEL ENHANCEMENT MODE MOSFET This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.\n\n •0.6mm Profile – Ideal for Low Profile Applications\n•Low On-Resistance\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n•Halogen and Antimony Free. “Green” Device (Note 3)\n; | DIODES 美台半导体 | | |
115V N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications DC-DC Primary Switch Load Switch Features and Benefits | DIODES 美台半导体 | | ||
115V N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications DC-DC Primary Switch Load Switch Features and Benefits | DIODES 美台半导体 | | ||
SiC Schottky Rectifier FEATURES ·High Surge Current Capability · Positive Temperature Coefficient · No Reverse Recovery APPLICATIONS · Solar inverter · Power factor correction · Switch mode power supply · Data Center | ISC 无锡固电 | | ||
650 V power Schottky silicon carbide diode 文件：146.07 Kbytes Page：8 Pages | STMICROELECTRONICS 意法半导体 | | ||
650 V power Schottky silicon carbide diode 文件：170.58 Kbytes Page：8 Pages | STMICROELECTRONICS 意法半导体 | | ||
650 V power Schottky silicon carbide diode 文件：170.58 Kbytes Page：8 Pages | STMICROELECTRONICS 意法半导体 | | ||
Dedicated to PFC applications 文件：454.44 Kbytes Page：9 Pages | STMICROELECTRONICS 意法半导体 | |
DMT12H065LFDF产品属性
- 类型
描述
- Automotive Compliant PPAP：
No
- Polarity：
N
- ESD Diodes：
No
- VDS：
115 V
- VGS：
20 ±V
- IDS @ TA = +25°C：
4.3 A
- PD @ TA = +25°C：
1.8 W
- RDS(ON) Max @ VGS (10V)：
65 mΩ
- RDS(ON) Max @ VGS (4.5V)：
70 mΩ
- RDS(ON) Max @ VGS (2.5V)：
N/A mΩ
- RDS(ON) Max @ VGS (1.8V)：
N/A mΩ
- VGS (th) Max：
2.2 V
- QG Typ @ VGS = 4.5V (nC)：
N/A nC
- QG Typ @ VGS = 10V (nC)：
5.5 nC
- Packages：
U-DFN2020-6
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
DIODESINC |
21+ |
NA |
3000 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
DIODES/美台 |
25+ |
NA |
32360 |
DIODES/美台全新特价DMT12H065LFDF-13即刻询购立享优惠#长期有货 |
|||
DIODES/美台 |
2025+ |
DFN226 |
5000 |
原装进口价格优 请找坤融电子! |
|||
DIODES/美台 |
24+ |
N/A |
500000 |
美台原厂超低价支持 |
|||
DIODES/美台 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
|||
DIODESINC |
25+ |
NA |
3000 |
可订货具体请确认 |
|||
Diodes(美台) |
25+ |
SOT |
28000 |
原装正品，可来电咨询 |
|||
DIODES/美台 |
26+ |
DFN |
43600 |
全新原装现货,假一赔十 |
|||
DIODES/美台 |
2511 |
DFN2020-6 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
DMT12H065LFDF芯片相关品牌
DMT12H065LFDF规格书下载地址
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DMT12H065LFDF数据表相关新闻
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属性 参数值 商品目录 超级电容器 容值 220mF 精度 -20%~+80%_ 额定电压 3.3V 工作温度 -10℃ ~ +60℃
2020-11-9
DdatasheetPDF页码索引
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