型号 功能描述 生产厂家 企业 LOGO 操作
DMN33D8L

Low On-Resistance

文件:275.16 Kbytes Page:5 Pages

DIODES

美台半导体

DMN33D8L

N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Motor Control  DC-DC Converters  Backlighting Features and Benefits  Low On-Resistance  Low

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Motor Control  DC-DC Converters  Backlighting Features and Benefits  Low On-Resistance  Low

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Motor Control  DC-DC Converters  Backlighting Features and Benefits  Low On-Resistance  Low

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate 2KV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN33D8LTQ is suitable

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate 2KV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN33D8LTQ is suitable

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  N-Channel MOSFET  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected Gate 2KV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN33D8LTQ is suitable

DIODES

美台半导体

N-Channel 30-V(D-S) MOSFET

Features 1) Lowon-resistance. 2) Fast switching speed. 3)Lowvoltage drive (2.5V) makes this device idealfor portable equipment. 4) Drive circuits can be simple. 5) Paralel use is easy. B)ESD protected 2KV HBM Applications Interfacing, switching (30V, 100mA)

TECHPUBLIC

台舟电子

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DIODES™ DMN33D8LVQ is suitable for automotive applications requiring specific

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DIODES™ DMN33D8LVQ is suitable for automotive applications requiring specific

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DIODES™ DMN33D8LVQ is suitable for automotive applications requiring specific

DIODES

美台半导体

Dual N-Channel MOSFET

Application « Reverse Battery protection © Load switch « Power management « Motor Control

TECHPUBLIC

台舟电子

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:275.16 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:275.16 Kbytes Page:5 Pages

DIODES

美台半导体

Low On-Resistance

文件:275.16 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:275.16 Kbytes Page:5 Pages

DIODES

美台半导体

Low On-Resistance

文件:275.16 Kbytes Page:5 Pages

DIODES

美台半导体

Low On-Resistance

文件:294.69 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:294.7 Kbytes Page:6 Pages

DIODES

美台半导体

Low On-Resistance

文件:294.69 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:294.7 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:294.7 Kbytes Page:6 Pages

DIODES

美台半导体

Low On-Resistance

文件:294.69 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

Small Surface Mount Package

文件:256.98 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:256.98 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:256.98 Kbytes Page:5 Pages

DIODES

美台半导体

Small Surface Mount Package

文件:256.98 Kbytes Page:5 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

文件:256.98 Kbytes Page:5 Pages

DIODES

美台半导体

Small Surface Mount Package

文件:256.98 Kbytes Page:5 Pages

DIODES

美台半导体

Low On-Resistance

文件:294.76 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:294.76 Kbytes Page:6 Pages

DIODES

美台半导体

Low On-Resistance

文件:294.76 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:294.76 Kbytes Page:6 Pages

DIODES

美台半导体

Low On-Resistance

文件:294.76 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:294.76 Kbytes Page:6 Pages

DIODES

美台半导体

更新时间:2025-10-19 17:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES
23+
SMD
880000
明嘉莱只做原装正品现货
DIODES/美台
21+
SOT-363
8080
只做原装,质量保证
DIODES
2016+
SOT23
42000
只做原装,假一罚十,公司可开17%增值税发票!
DIODES/美台
2450+
SOT-23
6540
只做原装正品假一赔十为客户做到零风险!!
DIODES(美台)
24+
SOT-323-6
9908
支持大陆交货,美金交易。原装现货库存。
DIODES/美台
2019+
SOT363
78550
原厂渠道 可含税出货
DIODES/美台
23+
NA
12730
原装正品代理渠道价格优势
DIODES(美台)
2447
SOT-363
105000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
Diodes(美台)
25+
SOT-363
500000
源自原厂成本,高价回收工厂呆滞
DIODES
24+
N/A
1027836
原装原装原装

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