| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DMN33D8LDW | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. | DIODES 美台半导体 |   | |
DMN33D8LDW | Low On-Resistance 文件：294.69 Kbytes Page：6 Pages | DIODES 美台半导体 | | |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP. •Low On-Resistance\n•Low Input Capacitance\n•Fast Switching Speed\n•ESD Protected\n•Totally Lead-Free & Fully RoHS Compliant\n•Halogen and Antimony Free. “Green” Device \n•Qualified to AEC-Q101 Standards for High Reliability\n•PPAP Capable ; | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Motor Control DC-DC Converters Backlighting Features and Benefits Low On-Resistance Low | DIODES 美台半导体 | | ||
丝印代码：N33；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Motor Control DC-DC Converters Backlighting Features and Benefits Low On-Resistance Low | DIODES 美台半导体 | | ||
丝印代码：N33；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Motor Control DC-DC Converters Backlighting Features and Benefits Low On-Resistance Low | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：294.7 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
Low On-Resistance 文件：294.69 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：294.7 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：294.7 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
Low On-Resistance 文件：294.69 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
Low On-Resistance 文件：275.16 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
Small Surface Mount Package 文件：256.98 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
Low On-Resistance 文件：294.76 Kbytes Page：6 Pages | DIODES 美台半导体 | |
DMN33D8LDW产品属性
- 类型
描述
- Automotive Compliant PPAP：
On Request*
- Polarity：
N+N
- ESD Diodes：
Yes
- VDS：
30 V
- VGS：
20 ±V
- IDS @ TA = +25°C：
0.25 A
- PD @ TA = +25°C：
N/A W
- RDS(ON) Max @ VGS (10V)：
N/A mΩ
- RDS(ON) Max @ VGS (4.5V)：
3000 mΩ
- RDS(ON) Max @ VGS (2.5V)：
7000 mΩ
- RDS(ON) Max @ VGS (1.8V)：
N/A mΩ
- VGS (th) Max：
1.5 V
- QG Typ @ VGS = 4.5V (nC)：
0.55 nC
- QG Typ @ VGS = 10V (nC)：
1.23 nC
- Packages：
SOT363
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
25 |
SOT-363 |
6000 |
原装正品 |
|||
DIODES |
2022+PB |
SOT-363 |
6000 |
||||
DIODES/美台 |
25+ |
SOT-363 |
25000 |
原装正品公司现货,假一赔十! |
|||
DIODES(美台) |
25+ |
SOT-363 |
6843 |
样件支持,可原厂排单订货! |
|||
DIODES(美台) |
25+ |
SOT-363 |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
DIODES/美台 |
21+ |
SOT363 |
880000 |
明嘉莱只做原装正品现货 |
|||
DIODES/美台 |
21+ |
SOT-363 |
8080 |
只做原装,质量保证 |
|||
DIODES/美台 |
2019+ |
SOT363 |
78550 |
原厂渠道 可含税出货 |
|||
DIODES |
19+ |
SOT363 |
200000 |
||||
DIODES(美台) |
2447 |
SOT-363 |
105000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
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DMN33D8LDW规格书下载地址
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2019-2-25
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