20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low RDS(ON) – Ensures On State Losses are Minimized  Small Form Factor, Thermally Efficient Package Enables Higher Density End Products  Occupies Just 33 of the Board Area Occupied by SO-8 Enabling Smaller End Product  100 Unclamped Inductive Switching (UIS) Test in Production

20V N-CHANNEL ENHANCEMENT MODE MOSFET

丝印代码：AT8；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low RDS(ON) – Ensures On State Losses are Minimized  Small Form Factor, Thermally Efficient Package Enables Higher Density End Products  Occupies Just 33 of the Board Area Occupied by SO-8 Enabling Smaller End Product  100 Unclamped Inductive Switching (UIS) Test in Production

丝印代码：AT8；20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low RDS(ON) – Ensures On State Losses are Minimized  Small Form Factor, Thermally Efficient Package Enables Higher Density End Products  Occupies Just 33 of the Board Area Occupied by SO-8 Enabling Smaller End Product  100 Unclamped Inductive Switching (UIS) Test in Production