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DMN2005价格
参考价格：￥0.6798
型号：DMN2005DLP4K-7 品牌：Diodes 备注：这里有DMN2005多少钱，2025年最近7天走势，今日出价，今日竞价，DMN2005批发/采购报价，DMN2005行情走势销售排行榜，DMN2005报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DMN2005 | MOSFET | ETC 知名厂家 | ETC |   |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Ultra Low Profile Package • Low On-Resistance • Very Low Gate Threshold Voltage, 0.9V Max. • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and A | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Ultra Low Profile Package • Low On-Resistance • Very Low Gate Threshold Voltage, 0.9V Max. • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and A | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage, 0.9V Max. • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • ESD Protec | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage, 0.9V Max. • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • ESD Protec | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage, 0.9V Max. • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • ESD Protec | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage, 0.9V Max. • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • ESD Protec | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Low Gate Threshold Voltage • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • ESD Protected Gate • Qual | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Low Gate Threshold Voltage • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • ESD Protected Gate • Qual | DIODES 美台半导体 | | ||
20V N-CHANNEL ENHANCEMENT MODE MOSFET Features Low RDS(ON)—Ensures On-State Losses are Minimized Small-Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies 33 of the Board Area Occupied by SO-8 Enabling Smaller End Product 100 Unclamped Inductive Switching, Test in Production— Ensures Mor | DIODES 美台半导体 | | ||
20V N-CHANNEL ENHANCEMENT MODE MOSFET Features Low RDS(ON)—Ensures On-State Losses are Minimized Small-Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies 33 of the Board Area Occupied by SO-8 Enabling Smaller End Product 100 Unclamped Inductive Switching, Test in Production— Ensures Mor | DIODES 美台半导体 | | ||
20V N-CHANNEL ENHANCEMENT MODE MOSFET Features Low RDS(ON)—Ensures On-State Losses are Minimized Small-Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies 33 of the Board Area Occupied by SO-8 Enabling Smaller End Product 100 Unclamped Inductive Switching, Test in Production— Ensures Mor | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：184.46 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：184.46 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：102.43 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：184.46 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：246.18 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：396.96 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：246.18 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：277.73 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：396.96 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：396.96 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：246.18 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：176.46 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：176.46 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：442.29 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：442.29 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：176.46 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：442.29 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：209.63 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：209.63 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：461.99 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：209.63 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：461.99 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：461.99 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
Qualified to AEC-Q101 Standards for High Reliability 文件：518.289 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
20V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰 文件：344.56 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
Qualified to AEC-Q101 Standards for High Reliability 文件：518.289 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
Qualified to AEC-Q101 Standards for High Reliability 文件：518.289 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
20V N-CHANNEL ENHANCEMENT MODE MOSFET 文件：647.42 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
20V N-CHANNEL ENHANCEMENT MODE MOSFET 文件：647.42 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
QUICK-FIT TERMINALS [KEYSTONE] AVAILABLE IN BRASS OR STEEL TABS • Ideal for rugged multi-insertion applications • Pre-assembled header reduces PC assembly costs • Increases PC board retention strength • Keeps terminals perpendicular • Maintains position for wave soldering | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
5.0 Watt - 28 Volts, Class C Microwave 2000 MHz 文件：166.08 Kbytes Page：3 Pages | GHZTECH | | ||
10 BASE T MAGNETICS ISOLATION MAGNETICS 文件：45.7 Kbytes Page：2 Pages | XFMRS | | ||
INSERT THRU-HOLE W/FLANGE 文件：126.34 Kbytes Page：1 Pages | WITTEN | | ||
Its a complete tool kit that fits in your palm. 文件：1.8415 Mbytes Page：16 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
DMN2005产品属性
- 类型
描述
- 型号
DMN2005
- 制造商
DIODES
- 制造商全称
Diodes Incorporated
- 功能描述
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
2025+ |
SOT-23 |
5000 |
原装进口价格优 请找坤融电子! |
|||
DIODES/美台 |
24+ |
原厂原装正品 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
DIODES/美台 |
24+ |
I3333-8 |
6524 |
原厂直供,支持账期,免费供样,技术支持 |
|||
DIODES/美台 |
2021+ |
原厂原封装 |
93628 |
原装进口现货 假一罚百 |
|||
DIODES/美台 |
25+ |
SOT-23 |
160027 |
明嘉莱只做原装正品现货 |
|||
DIODES/美台 |
2019+ |
SOT23 |
78550 |
原厂渠道 可含税出货 |
|||
DIODES(美台) |
卷装 |
4669 |
全新原装正品现货可开票 |
||||
DIODES/美台 |
2038+ |
SOT-23 |
8000 |
原装正品假一罚十 |
|||
DIODES/美台 |
24+ |
DFN |
2270 |
全新原装现货特价销售,欢迎来电查询 |
|||
DIODES/美台 |
12+ |
DFN |
2600 |
原装正品 可含税交易 |
DMN2005规格书下载地址
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2020-1-9
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