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DMN2005价格
参考价格：￥0.6798
型号：DMN2005DLP4K-7 品牌：Diodes 备注：这里有DMN2005多少钱，2025年最近7天走势，今日出价，今日竞价，DMN2005批发/采购报价，DMN2005行情走势销售排行榜，DMN2005报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DMN2005 | MOSFET | ETC 知名厂家 | ETC |   |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Ultra Low Profile Package • Low On-Resistance • Very Low Gate Threshold Voltage, 0.9V Max. • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and A | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Ultra Low Profile Package • Low On-Resistance • Very Low Gate Threshold Voltage, 0.9V Max. • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and A | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage, 0.9V Max. • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • ESD Protec | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage, 0.9V Max. • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • ESD Protec | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage, 0.9V Max. • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • ESD Protec | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage, 0.9V Max. • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • ESD Protec | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Low Gate Threshold Voltage • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • ESD Protected Gate • Qual | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Low Gate Threshold Voltage • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • ESD Protected Gate • Qual | DIODES 美台半导体 | | ||
20V N-CHANNEL ENHANCEMENT MODE MOSFET Features Low RDS(ON)—Ensures On-State Losses are Minimized Small-Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies 33 of the Board Area Occupied by SO-8 Enabling Smaller End Product 100 Unclamped Inductive Switching, Test in Production— Ensures Mor | DIODES 美台半导体 | | ||
20V N-CHANNEL ENHANCEMENT MODE MOSFET Features Low RDS(ON)—Ensures On-State Losses are Minimized Small-Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies 33 of the Board Area Occupied by SO-8 Enabling Smaller End Product 100 Unclamped Inductive Switching, Test in Production— Ensures Mor | DIODES 美台半导体 | | ||
20V N-CHANNEL ENHANCEMENT MODE MOSFET Features Low RDS(ON)—Ensures On-State Losses are Minimized Small-Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies 33 of the Board Area Occupied by SO-8 Enabling Smaller End Product 100 Unclamped Inductive Switching, Test in Production— Ensures Mor | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：184.46 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：184.46 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：102.43 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：184.46 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：246.18 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：396.96 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：246.18 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：277.73 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：396.96 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：396.96 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：246.18 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：176.46 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：176.46 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：442.29 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：442.29 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：176.46 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：442.29 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：209.63 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：209.63 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：461.99 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：209.63 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：461.99 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：461.99 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
Qualified to AEC-Q101 Standards for High Reliability 文件：518.289 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
20V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI짰 文件：344.56 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
Qualified to AEC-Q101 Standards for High Reliability 文件：518.289 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
Qualified to AEC-Q101 Standards for High Reliability 文件：518.289 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
20V N-CHANNEL ENHANCEMENT MODE MOSFET 文件：647.42 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
20V N-CHANNEL ENHANCEMENT MODE MOSFET 文件：647.42 Kbytes Page：7 Pages | DIODES 美台半导体 | | ||
QUICK-FIT TERMINALS [KEYSTONE] AVAILABLE IN BRASS OR STEEL TABS • Ideal for rugged multi-insertion applications • Pre-assembled header reduces PC assembly costs • Increases PC board retention strength • Keeps terminals perpendicular • Maintains position for wave soldering | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
5.0 Watt - 28 Volts, Class C Microwave 2000 MHz 文件：166.08 Kbytes Page：3 Pages | GHZTECH | | ||
10 BASE T MAGNETICS ISOLATION MAGNETICS 文件：45.7 Kbytes Page：2 Pages | XFMRS | | ||
INSERT THRU-HOLE W/FLANGE 文件：126.34 Kbytes Page：1 Pages | WITTEN | | ||
Its a complete tool kit that fits in your palm. 文件：1.8415 Mbytes Page：16 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
DMN2005产品属性
- 类型
描述
- 型号
DMN2005
- 制造商
DIODES
- 制造商全称
Diodes Incorporated
- 功能描述
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
DIODES/美台 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
DIODES/美台 |
2038+ |
SOT-23 |
8000 |
原装正品假一罚十 |
|||
DIODES |
2016+ |
DFN |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
DIODES/美台 |
21+ |
SOT-23(SOT-23-3) |
8080 |
只做原装,质量保证 |
|||
DIODES/美台 |
新年份 |
SOT-23 |
37000 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
|||
Diodes |
24+ |
DFN1310H4-6 |
7500 |
||||
DIODES/美台 |
2450+ |
SOT-23 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
DIODES/美台 |
2407+ |
30098 |
全新原装!仓库现货,大胆开价! |
||||
DiodesZetex |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
DMN2005规格书下载地址
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2020-1-9
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