DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：261.5 Kbytes Page：6 Pages

Power switching application

Description The 9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply

Dual N-Channel 20-V (D-S) MOSFET

文件：996.47 Kbytes Page：7 Pages

6A竊?0V Dual N-CHANNEL MOSFET

文件：124.3 Kbytes Page：4 Pages

Dual N-Channel 2.5V Specified PowerTrench MOSFET

文件：117.54 Kbytes Page：5 Pages

Dual N-Channel 20-V (D-S) MOSFET

文件：1.62045 Mbytes Page：7 Pages