位置：首页 > IC中文资料 > DMG6N60-TR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DMG6N60-TR | 600V N-Channel Power MOSFET 文件：1.88521 Mbytes Page：8 Pages | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 |   | |
Avalanche Energy Specified DESCRITION · Designed for high efficiency switch mode power supply. FEATURES · Drain Current –ID= 6A@ TC=25℃ · Drain Source Voltage-: VDSS= 600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 1.2Ω (Max) · Avalanche Energy Specified · Fast Switching · Simple Drive Requirements | ISC 无锡固电 | | ||
6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications | UTC 友顺 | | ||
N-CHANNEL POWER MOSFET 文件：460.3 Kbytes Page：6 Pages | ZSELEC 淄博圣诺 | | ||
N-Channel Power MOSFET 文件：486.21 Kbytes Page：10 Pages | NELLSEMI 尼尔半导体 | | ||
N-Channel 600V (D-S) Power MOSFET 文件：1.0803 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Diodes(美台) |
24+ |
8PowerVDFN |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
DIODES/美台 |
24+ |
NA/ |
2979 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
DIODES |
2016+ |
QFN |
15537 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
DIODES/美台 |
25+ |
DFN33 |
16665 |
原装正品,假一罚十! |
|||
DIODES/美台 |
24+ |
QFN |
880000 |
明嘉莱只做原装正品现货 |
|||
DIODES/美台 |
24+ |
POWERDI3333 |
9600 |
原装现货,优势供应,支持实单! |
|||
原装DIODES |
19+ |
QFN |
20000 |
原装现货假一罚十 |
|||
DIODES/美台 |
24+ |
QFN |
39500 |
进口原装现货 支持实单价优 |
|||
DIODES/美台 |
23+ |
POWERDI3333-8 |
8000 |
只做原装现货 |
|||
DIODES/美台 |
23+ |
POWERDI3333-8 |
7000 |
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2020-1-9
DdatasheetPDF页码索引
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