SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

VOLTAGE 50 to 1000 Volts CURRENT 1.5 Amperes FEATURES • Plastic material used carries Underwriters Laboratory recognition 94V-O • Low leakage • Surge overload rating-- 50 amperes peak • Ideal for printed circuit board • Exceeds environmental standards of MIL-S-19500/228 • Pb free product ar

GLASS PASSIVATED BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 1.5 Amperes FEATURES ● Rating to 1000V PRV ● Ideal for printed circuit board ● Reliable low cost construction utilizing molded plastic technique ● The plastic material has UL flammability classification 94V-0 ● In compliance with EU RoHS 2

SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

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1.5A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER

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通用型桥式整流器

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast

N-CHANNEL BROADBAND RF POWER MOSFET

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 50 V: Output P

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

GaAs Infrared Light Emitting Diodes

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