SILICON BRIDGE RECTIFIERS

VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.5 A FEATURES ◇ Rating to 1000V PRV ◇ Surge overload rating to 50 Amperes peak ◇ Glass passivated chip junctions ◇ Reliable low cost construction utilizing molded plastic technique results in inexpensive product ◇ Lead solderable per MIL-STD-202 method

Silicon Bridge Rectifiers

VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.5 A Features ◇ Rating to 1000V PRV ◇ Surge overload rating to 50 Amperes peak ◇ Glass passivated chip junctions ◇ Reliable low cost construction utilizing molded plastic technique results in inexpensive product ◇ Lead solderable per MIL-STD-202 method

Plastic Medium Power NPN Silicon Transistor

Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. • Suitable for Transformerless, Line–Operated Equipment • Thermopad Construction Provides High Power Dissipation Rating for Hig

TMOS BROADBAND RF POWER FET

The RF TMOS® Line Power Field Effect Transistor N–Channel Enhancement Mode Designed for wideband large–signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 2.0 Watts Minimum Gain = 16 dB Efficiency = 55 (Typical) • G

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

L, S- BAND SPDT SWITCH

DESCRIPTION The µPG158TB is a L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin

Low Power Dual Operational Amplifiers

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