DIODE MODULE

DIODE MODULE Power Diode Module DD160F series are designed for various rectifier circuits. DD160F has two diode chips connected in series in a package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 1,600V is avaiable for va

DIODE MODULE

DIODE MODULE

DIODE MODULE Power Diode Module DD160F series are designed for various rectifier circuits. DD160F has two diode chips connected in series in a package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 1,600V is avaiable for va

DIODE MODULE

DIODE MODULE Power Diode Module DD160F series are designed for various rectifier circuits. DD160F has two diode chips connected in series in a package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 1,600V is avaiable for va

DIODE MODULE

DIODE MODULE Power Diode Module DD160F series are designed for various rectifier circuits. DD160F has two diode chips connected in series in a package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 1,600V is avaiable for va

DIODE MODULE

DIODE MODULE Power Diode Module DD160F series are designed for various rectifier circuits. DD160F has two diode chips connected in series in a package and the mounting base is elctrically isolated from elements for simple heatsink construction. Wide voltage rating up to, 1,600V is avaiable for va

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

POWER TRANSISTORS(10A,320-380V,125W)