NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications.

Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 1.75 W (Tamb=25℃) Collector current ICM: 3 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for general-purpose amplifier and switching applications.

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier

POWER TRANSISTORS(3A,60V,30W)

3 AMPERE POWER TRANSISTOR 60 VOLT 30 WATTS

NPN EPITAXIAL PLANAR TRANSISTOR

DESCRIPTION The UTC 2SD313 is designed for use in general purpose amplifier and switching applications.

NPN Silicon Epitaxial Power Transistor

Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507

NPN EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

LOW FREQUENCY POWER AMPLIFIER Complement to 2SB507

PLANAR TYPE SILICON TRANSISTOR FOR AF POWER AMPLIFIER USE

Planar Rtpe Silicon Transistor For AF POWER Amplifier Use

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier

NPN EPITAXIAL PLANAR TRANSISTOR

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NPN EPITAXIAL PLANAR TRANSISTOR

DC/DC变换控制电路

D3133是一个内置功率MOSFET的单片降压开关式控制器。它能持续输出3A电流，有较宽的输入范围，具有优良的负载调整率和电压调整率。电流模式运作提供了快速瞬态响应和增加环路的稳定性。芯片内置电流限制和热保护等功能D3133 只需要最小的外围元器件。 ·内置电流限制和热保护功能\r\n\r\n·效率达到95％\r\n\r\n·输出电压可调范围为0.8到 16V\r\n\r\n·振荡频率为400KHz;

NPN EPITAXIAL PLANAR TRANSISTOR

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Short Circuit Protected Regulated, 3W SIP DC/DC Converters

文件：101.01 Kbytes Page：2 Pages

4:1 Input, 3W SIP Single & Dual Output DC/DC Converters

D300RU SERIES

文件：273.8 Kbytes Page：2 Pages

Single & Dual Output 3W SIP, Wide Input DC/DC Converters

文件：191.18 Kbytes Page：2 Pages

HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficienc

Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp

Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics.

PIN Photodiode

PIN Photodiode For optical control systems Features • Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) • High sensitivity, high reliability • Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) • Wide

Reference Diode

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Reference Diode

文件：126.55 Kbytes Page：4 Pages