HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficienc

NPN SILICON RF TRANSISTOR

DESCRIPTION: The MRF313 is Designed for wide band Amplifier Applications up to 400 MHz. FEATURES: • PG = 15 dB min. at 1.0 W/ 400 MHz • Common Emitter for Improved Stability • Omnigold™ Metalization System

HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficienc

The RF Line NPN Silicon High-Frequency Transistor 1.0W, 400MHz, 28V

The RF Line NPN Silicon High-Frequency Transistor 1.0W, 400MHz, 28V Designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 V, 400 MHz characteristics — Output power = 1.0 W Power gain = 15 dB min. Effic

The RF Line NPN Silicon High-Frequency Transistor

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封装/外壳：305A-01 包装：托盘 描述：TRANS RF NPN 30V 150MA 305A-01 分立半导体产品 晶体管 - 双极（BJT）- 射频

HIGH-FREQUENCY TRANSISTOR NPN SILICON

NPN SILICON RF TRANSISTOR

Bipolar

The RF Line NPN Silicon High-Frequency Transistor

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The RF Line NPN Silicon High-Frequency Transistor

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Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp

Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics.

PIN Photodiode

PIN Photodiode For optical control systems Features • Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) • High sensitivity, high reliability • Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) • Wide

Reference Diode

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Reference Diode

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