Reference Diode

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Reference Diode

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5.0x7.0mm Surface Mount LVDS Clock Oscillator Series

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丝印代码：KF；N-Channel Enhancement Mode Fidld Effect Transistor

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丝印代码：A1；P-Channel 1.8-V (G-S) MOSFET

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Low Voltage MOSFET

Reference Diode

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封装/外壳：TO-46-2，金属罐 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC VREF SHUNT 5% TO2 集成电路（IC） 电压基准

IC VREF SHUNT 1.22V TO46-2

HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficienc

Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp

Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics.

PIN Photodiode

PIN Photodiode For optical control systems Features • Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) • High sensitivity, high reliability • Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) • Wide